RBQ30NS65AFHTL

RBQ30NS65AFH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ● Outline VR 65 V Io 30 A IFSM 100 A 　 　 　 　 　 　 　 　 　 　 　 　　　 ● Features ● Inner Circuit High reliability Power mold type Cathode common dual type Low IR ● Application ● Packaging Specifications Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 Quantity(pcs) 1000 Taping Code TL Marking BQ30NS65A Switching power supply ● Structure Silicon epitaxial planar ● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V RM Duty≦0.5 65 V Reverse voltage VR Reverse direct voltage 65 V Average rectified forward current Io 60Hz half sin waveform，resistive load， Io/2 per diode，Tc=80℃Max. 30 A IFSM 60Hz half sin waveform， non-repetitive，per diode，Ta=25℃ 100 A Tj - 150 ℃ Tstg - -55 ～ 150 ℃ Peak forward surge current Junction temperature(1) Storage temperature Note(1) To avoid occurrence of thermal runaway ， actual board is to be designed to fulfill dPd/dTj