RBQ30T65A

Data Sheet Schottky Barrier Diode RBQ30T65A lApplications General rectification lDimensions (Unit : mm) 4.5±0.3 　　　 0.1 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 lStructure ① 1.3 0.8 (1) (2) (3) 13.5MIN lConstruction Silicon epitaxial planer 1 .2 5.0±0.2 8.0±0.2 12.0±0.2 15.0±0.4 　 0 .2 8.0 0.7±0.1 0 .05 lFeatures 1)Cathode common type. 2)Low IR 3)High reliability 2.6±0.5 ROHM : TO220FN ① Manufacture Date lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature (*1) Rating of per diode : Io/2 lElectrical characteristics (Tj=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. Tstg Limits 65 65 30 100 150 -40 to +150 Unit V V A A °C °C Typ. - Max. 0.69 450 Unit V μA IF=15A VR=65V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A RBQ30T65A 　 Data Sheet 100 100000 Ta=150°C 10000 FORWARD CURRENT:IF(A) 10 REVERSE CURRENT:IR(mA) Ta=125°C Ta=150°C 1000 100 Ta=125°C 1 Ta=75°C Ta=25°C Ta=75°C 10 0.1 Ta=-25°C 1 Ta=25°C 0.1 Ta=-25°C 0.01 0 100 200 300 400 500 600 700 800 900 0.01 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz FORWARD VOLTAGE:VF(mV) 700 690 680 670 660 650 640 630 620 610 AVE:645.4mV Ta=25°C IF=15A n=30pcs 1000 100 10 1 0 5 10 15 20 25 30 600 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1300 1290 1280 1270 1260 1250 1240 1230 1220 1210 1200 AVE:1225.8pF Ta=25°C f=1MHz VR=0V n=10pcs 80 REVERSE CURRENT:IR(mA) Ta=25°C VR=65V n=30pcs AVE:40.08mA 60 40 20 0 IR DISPERSION MAP Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A RBQ30T65A 　 Data Sheet 500 450 PEAK SURGE FORWARD CURRENT:IFSM(A) 400 350 300 250 200 150 100 50 0 IFSM DISRESION MAP REVERSE RECOVERY TIME:trr(ns) IFSM 1cyc 8.3ms 30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs AVE:16.1ns 25 20 15 10 5 0 trr DISPERSION MAP 500 450 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 400 350 300 250 200 150 100 50 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM 8.3ms 1cyc 8.3ms 500 450 400 350 300 250 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 IFSM t 100 40 35 TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) 10 FORWARD POWER DISSIPATION:Pf(W) 30 25 20 15 10 DC 5 0.01 0.001 0 0.01 0.1 1 10 100 1000 0 10 20 30 40 50 D=1/2 Sin(q＝180) Rth(j-c) 1 0.1 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.11 - Rev.A RBQ30T65A 　 Data Sheet 7 60 0A Io t 40 D=1/2 30 DC T VR D=t/T VR=30V Tj=150°C 6 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 50 0V REVERSE POWER DISSIPATION:PR (W) 5 4 3 DC 20 2 Sin(q＝180) D=1/2 1 10 Sin(q＝180) 0 0 10 20 30 40 50 60 70 0 0 25 50 75 100 125 150 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 80 Io 70 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 60 DC 50 40 30 20 10 0 0 25 50 75 100 125 150 D=1/2 T 0A 0V t VR ELECTROSTATIC DISCHARGE TEST ESD(KV) D=t/T VR=30V Tj=150°C 30 No break at 30kV 25 20 15 10 AVE:5.9kV 5 Sin(q＝180) 0 C=200pF R=0W C=100pF R=1.5kW CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A