RBQ5RSM65BTF
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
● Outline
VR
65
V
Io
5
A
IFSM
100
A
● Features
● Inner Circuit
High reliability
Power mold type
Low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
12
Quantity(pcs)
4000
Taping Code
TL1
Marking
BQ5RSM65B
General rectification
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
65
V
Reverse voltage
VR
Reverse direct voltage
65
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=130℃Max.
5
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
100
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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