RBR10BGE30A
Data sheet
Schottky Barrier Diode
● Outline
VR
30
V
Io
10
A
IFSM
50
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low V F
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
16
Quantity(pcs)
2500
Taping Code
TL
Marking
BR10BM30A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
30
V
Reverse voltage
VR
Reverse direct voltage
30
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=100℃Max.
10
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
50
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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