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RBR10NS40ATL

RBR10NS40ATL

  • 厂商:

    ROHM(罗姆)

  • 封装:

    TO263

  • 描述:

    DIODE (RECTIFIER FRD) 40V-VR 10A

  • 数据手册
  • 价格&库存
RBR10NS40ATL 数据手册
RBR10NS40A Schottky Barrier Diode Data sheet                                                   ● Outline VR 40 V Io 10 A IFSM 50 A                           ● Features ● Inner Circuit High reliability Power mold type Cathode common dual type Low V F ● Application ● Packaging Specifications Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 Quantity(pcs) 1000 Taping Code TL Marking BR10NS40A Switching power supply ● Structure Silicon epitaxial planar ● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V RM Duty≦0.5 40 V Reverse voltage VR Reverse direct voltage 40 V Average rectified forward current Io 60Hz half sin waveform,resistive load, Io/2 per diode,Tc=130℃Max. 10 A IFSM 60Hz half sin waveform, non-repetitive,per diode,Ta=25℃ 50 A Tj - 150 ℃ Tstg - -55 ~ 150 ℃ Peak forward surge current Junction temperature(1) Storage temperature Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
RBR10NS40ATL 价格&库存

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RBR10NS40ATL
    •  国内价格 香港价格
    • 1+11.601181+1.40434
    • 10+6.3794410+0.77224
    • 50+5.7398750+0.69482
    • 100+4.55790100+0.55174
    • 500+4.09644500+0.49588
    • 1000+3.894051000+0.47138
    • 2000+3.780712000+0.45766
    • 4000+2.873994000+0.34790

    库存:100