RBR10NS60AFH
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
● Outline
VR
60
V
Io
10
A
IFSM
50
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low V F
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
Quantity(pcs)
1000
Taping Code
TL
Marking
BR10NS60A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
60
V
Reverse voltage
VR
Reverse direct voltage
60
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=130℃Max.
10
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
50
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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免费人工找货- 国内价格
- 1+12.13483
- 10+9.16477
- 50+8.34164
- 100+6.59354
- 200+6.16076
- 500+5.21034
- 1000+4.98971
- 国内价格 香港价格
- 1000+4.950511000+0.61910
- 2000+4.565172000+0.57091
- 3000+4.368683000+0.54634
- 5000+4.147795000+0.51872
- 7000+4.061277000+0.50790
- 国内价格 香港价格
- 1+22.349401+2.79496
- 10+5.7205710+0.71540
- 50+4.1611350+0.52038
- 100+3.64393100+0.45570
- 500+3.29913500+0.41258
- 1000+3.228601000+0.40376
- 2000+3.173742000+0.39690
- 4000+3.134564000+0.39200