RBR1LAM60A
Schottky Barrier Diode
Data sheet
● Outline
VR
60
V
Io
1
A
IFSM
40
A
● Features
● Inner Circuit
High reliability
Small power mold type
Low V F
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
180
Taping Width(mm)
12
Quantity(pcs)
3000
Taping Code
TR
Marking
06
General rectification
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
Reverse voltage
V RM
VR
Duty≦0.5
Reverse direct voltage
60
60
V
V
Average rectified forward current
Io
Glass epoxy mounted、
60Hz half sin waveform、resistive load、
Tc=135℃ Max.
1
A
Peak forward surge current
IFSM
60Hz half sin waveform、Non-repetitive、
one cycle、Ta=25℃
40
A
Junction temperature(1)
Storage temperature
Tj
Tstg
-
150
-55 ~ 150
℃
℃
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
很抱歉,暂时无法提供与“RBR1LAM60ATR”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格 香港价格
- 3000+0.822983000+0.10292
- 国内价格
- 5+0.63386
- 50+0.51182
- 150+0.45080
- 国内价格 香港价格
- 1+3.549891+0.44394
- 10+2.9073110+0.36358
- 50+1.5281050+0.19110
- 100+1.44974100+0.18130
- 500+0.86201500+0.10780
- 1000+0.838501000+0.10486
- 2000+0.775812000+0.09702
- 4000+0.767974000+0.09604
- 国内价格
- 10+3.58954
- 50+2.53729
- 100+2.39303
- 200+2.23179
- 500+0.88254
- 1000+0.84520
- 2000+0.79598