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RBR20NS40ATL

RBR20NS40ATL

  • 厂商:

    ROHM(罗姆)

  • 封装:

    TO-263-3,D²Pak(2引线+接片),TO-263AB

  • 描述:

    二极管阵列 1 对共阴极 40 V 10A 表面贴装型 TO-263-3,D²Pak(2 引线 + 接片),TO-263AB

  • 数据手册
  • 价格&库存
RBR20NS40ATL 数据手册
RBR20NS40A Schottky Barrier Diode Data sheet                                                   ● Outline VR 40 V Io 20 A IFSM 100 A                           ● Features ● Inner Circuit High reliability Power mold type Cathode common dual type Low V F ● Application ● Packaging Specifications Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 Quantity(pcs) 1000 Taping Code TL Marking BR20NS40A Switching power supply ● Structure Silicon epitaxial planar ● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V RM Duty≦0.5 40 V Reverse voltage VR Reverse direct voltage 40 V Average rectified forward current Io 60Hz half sin waveform,resistive load, Io/2 per diode,Tc=120℃Max. 20 A IFSM 60Hz half sin waveform, non-repetitive,per diode,Ta=25℃ 100 A Tj - 150 ℃ Tstg - -55 ~ 150 ℃ Peak forward surge current Junction temperature(1) Storage temperature Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
RBR20NS40ATL 价格&库存

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RBR20NS40ATL
  •  国内价格 香港价格
  • 1+13.997511+1.69442
  • 10+7.6990410+0.93198
  • 50+6.9299550+0.83888
  • 100+5.49700100+0.66542
  • 500+4.94649500+0.59878
  • 1000+4.703621000+0.56938
  • 2000+4.557902000+0.55174
  • 4000+3.464974000+0.41944

库存:100