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RBR2L30ADDTE25

RBR2L30ADDTE25

  • 厂商:

    ROHM(罗姆)

  • 封装:

    SMA

  • 描述:

  • 数据手册
  • 价格&库存
RBR2L30ADDTE25 数据手册
RBR2L30ADD Schottky Barrier Diode (AEC-Q101 qualified) Data sheet                                                   ● Outline VR 30 V Io 2 A IFSM 40 A                             ● Features ● Inner Circuit High reliability Small power mold type Low V F ● Application ● Packaging Specifications Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 12 Quantity(pcs) 1500 Taping Code TE25 Marking C5 General rectification ● Structure Silicon epitaxial planar ● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage Reverse voltage V RM VR Duty≦0.5 Reverse direct voltage 30 30 V V Average rectified forward current Io Glass epoxy mounted、 60Hz half sin waveform、resistive load、 Tc=124℃ Max. 2 A Peak forward surge current IFSM 60Hz half sin waveform、Non-repetitive、 one cycle、Ta=25℃ 40 A Junction temperature(1) Storage temperature Tj Tstg - 150 -55 ~ 150 ℃ ℃ Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
RBR2L30ADDTE25 价格&库存

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