RBR2MM40C
Schottky Barrier Diode
Data sheet
● Outline
VR
40
V
Io
2
A
IFSM
30
A
● Features
● Inner Circuit
High reliability
Small power mold type
Low V F
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
180
Taping Width(mm)
8
Quantity(pcs)
3000
Taping Code
TR
Marking
A9
General rectification
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
Reverse voltage
V RM
VR
Duty≦0.5
Reverse direct voltage
40
40
V
V
Average rectified forward current
Io
Glass epoxy mounted、
60Hz half sin waveform、resistive load、
Tc=90℃ Max.
2
A
Peak forward surge current
IFSM
60Hz half sin waveform、Non-repetitive、
one cycle、Ta=25℃
30
A
Junction temperature(1)
Storage temperature
Tj
Tstg
-
150
-55 ～ 150
℃
℃
Note(1) To avoid occurrence of thermal runaway ， actual board is to be designed to fulfill dPd/dTj
