RBR2VWM30A
Data sheet
Schottky Barrier Diode
● Outline
VR
30
V
Io
2
A
IFSM
30
A
● Features
● Inner Circuit
High reliability
Small power mold type
Low V F
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
180
Taping Width(mm)
8
Quantity(pcs)
3000
Taping Code
TR
Marking
23
General rectification
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
Reverse voltage
V RM
VR
Duty≦0.5
Reverse direct voltage
30
30
V
V
Average rectified forward current
Io
Glass epoxy mounted、
60Hz half sin waveform、resistive load、
Tc=114℃ Max.
2
A
Peak forward surge current
IFSM
60Hz half sin waveform、Non-repetitive、
one cycle、Ta=25℃
30
A
Junction temperature(1)
Storage temperature
Tj
Tstg
-
150
-55 ~ 150
℃
℃
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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- 50+1.6325350+0.19796
- 100+1.17187100+0.14210
- 500+0.85668500+0.10388
- 1000+0.800101000+0.09702
- 2000+0.751612000+0.09114
- 4000+0.719294000+0.08722
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- 1000+2.78154
- 国内价格
- 3000+1.06951
- 6000+1.01119
- 30000+0.91017