RBR30NS30A
Schottky Barrier Diode
Data sheet
● Outline
VR
30
V
Io
30
A
IFSM
100
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low V F
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
Quantity(pcs)
1000
Taping Code
TL
Marking
BR30NS30A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
30
V
Reverse voltage
VR
Reverse direct voltage
30
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=110℃Max.
30
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
100
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
很抱歉,暂时无法提供与“RBR30NS30ATL”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格 香港价格
- 1+15.519511+1.87866
- 10+8.5329010+1.03292
- 50+7.6828550+0.93002
- 100+6.09609100+0.73794
- 500+5.48891500+0.66444
- 1000+5.213651000+0.63112
- 2000+5.059832000+0.61250
- 4000+3.845474000+0.46550