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RBR30NS40ATL

RBR30NS40ATL

  • 厂商:

    ROHM(罗姆)

  • 封装:

    TO263

  • 描述:

    DIODE (RECTIFIER FRD) 40V-VR 30A

  • 数据手册
  • 价格&库存
RBR30NS40ATL 数据手册
RBR30NS40A Schottky Barrier Diode Data sheet                                                   ● Outline VR 40 V Io 30 A IFSM 100 A                           ● Features ● Inner Circuit High reliability Power mold type Cathode common dual type Low V F ● Application ● Packaging Specifications Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 Quantity(pcs) 1000 Taping Code TL Marking BR30NS40A Switching power supply ● Structure Silicon epitaxial planar ● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V RM Duty≦0.5 40 V Reverse voltage VR Reverse direct voltage 40 V Average rectified forward current Io 60Hz half sin waveform,resistive load, Io/2 per diode,Tc=95℃Max. 30 A IFSM 60Hz half sin waveform, non-repetitive,per diode,Ta=25℃ 100 A Tj - 150 ℃ Tstg - -55 ~ 150 ℃ Peak forward surge current Junction temperature(1) Storage temperature Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
RBR30NS40ATL 价格&库存

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RBR30NS40ATL
    •  国内价格 香港价格
    • 1+10.670171+1.29164
    • 10+8.0066810+0.96922
    • 50+5.3350950+0.64582
    • 100+4.26645100+0.51646
    • 500+3.99929500+0.48412
    • 1000+3.845471000+0.46550
    • 2000+3.788802000+0.45864
    • 4000+3.764524000+0.45570

    库存:80