RBR3L60ATE25

RBR3L60A Schottky Barrier Diode Data sheet 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ● Outline V Io 3 A IFSM 40 A ● Features 　 　 　 　 　 　 　 　 　 　 　 　　　 or 60 e N co ew m m D es en ig de ns d f VR ● Inner Circuit High reliability Small power mold type Low V F ● Application ● Packaging Specifications Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 12 Basic Ordering Unit(pcs) 1500 Taping Code TE25 Marking 03 General rectification ● Structure Silicon epitaxial planar Symbol Conditions Limits Unit Repetitive peak reverse voltage Reverse voltage V RM VR Duty≦0.5 Reverse direct voltage 60 60 V V R ● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Io Glass epoxy mounted、 60Hz half sin waveform、resistive load、 Tc=70℃ Max. 3 A IFSM 60Hz half sin waveform、Non-repetitive、 one cycle、Ta=25℃ 40 A Tj Tstg - 150 -55 ～ 150 ℃ Average rectified forward current ot Peak forward surge current Junction temperature(1) Storage temperature ℃ N Note(1) To avoid occurrence of thermal runaway ， actual board is to be designed to fulfill dPd/dTj