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RBR3LAM30ATR

RBR3LAM30ATR

  • 厂商:

    ROHM(罗姆)

  • 封装:

    SOD128

  • 描述:

    DIODE SCHOTTKY 30V 3A PMDTM

  • 数据手册
  • 价格&库存
RBR3LAM30ATR 数据手册
RBR3LAM30A Schottky Barrier Diode Data sheet                                                   ● Outline VR 30 V Io 3 A IFSM 40 A                           ● Features ● Inner Circuit High reliability Small power mold type Low V F ● Application ● Packaging Specifications Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 12 Quantity(pcs) 3000 Taping Code TR Marking C8 General rectification ● Structure Silicon epitaxial planar ● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage Reverse voltage V RM VR Duty≦0.5 Reverse direct voltage 30 30 V V Average rectified forward current Io Glass epoxy mounted、 60Hz half sin waveform、resistive load、 Tc=105℃ Max. 3 A Peak forward surge current IFSM 60Hz half sin waveform、Non-repetitive、 one cycle、Ta=25℃ 40 A Junction temperature(1) Storage temperature Tj Tstg - 150 -55 ~ 150 ℃ ℃ Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
RBR3LAM30ATR 价格&库存

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RBR3LAM30ATR
  •  国内价格 香港价格
  • 1+4.089421+0.49340
  • 10+3.1781210+0.38345
  • 100+1.90532100+0.22988
  • 500+1.76424500+0.21286
  • 1000+1.199711000+0.14475

库存:5804

RBR3LAM30ATR
  •  国内价格 香港价格
  • 3000+0.873313000+0.10537

库存:5804

RBR3LAM30ATR
    •  国内价格 香港价格
    • 1+3.818121+0.46158
    • 10+3.1290810+0.37828
    • 50+1.6456150+0.19894
    • 100+1.55643100+0.18816
    • 500+0.92413500+0.11172
    • 1000+0.891711000+0.10780
    • 2000+0.826862000+0.09996
    • 4000+0.818754000+0.09898

    库存:596