RBR3LAM60ATF
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
● Outline
VR
60
V
Io
3
A
IFSM
45
A
● Features
● Inner Circuit
High reliability
Small power mold type
Low V F
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
180
Taping Width(mm)
12
Quantity(pcs)
3000
Taping Code
TR
Marking
03
General rectification
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
Reverse voltage
V RM
VR
Duty≦0.5
Reverse direct voltage
60
60
V
V
Average rectified forward current
Io
Glass epoxy mounted、
60Hz half sin waveform、resistive load、
Tc=93℃ Max.
3
A
Peak forward surge current
IFSM
60Hz half sin waveform、Non-repetitive、
one cycle、Ta=25℃
45
A
Junction temperature(1)
Storage temperature
Tj
Tstg
-
150
-55 ~ 150
℃
℃
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
很抱歉,暂时无法提供与“RBR3LAM60ATFTR”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 25+1.21697
- 50+0.91054
- 100+0.84926
- 200+0.77659
- 500+0.55596
- 国内价格 香港价格
- 1+3.477751+0.42238
- 10+2.6063010+0.31654
- 50+1.6541550+0.20090
- 100+1.21843100+0.14798
- 500+0.78270500+0.09506
- 1000+0.693941000+0.08428
- 2000+0.653592000+0.07938
- 4000+0.645534000+0.07840