RBR3MM60ATF
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
● Outline
VR
60
V
Io
3
A
IFSM
30
A
● Features
● Inner Circuit
High reliability
Small power mold type
Low V F
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
180
Taping Width(mm)
8
Quantity(pcs)
3000
Taping Code
TR
Marking
E5
General rectification
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
Reverse voltage
V RM
VR
Duty≦0.5
Reverse direct voltage
60
60
V
V
Average rectified forward current
Io
Glass epoxy mounted、
60Hz half sin waveform、resistive load、
Tc=35℃ Max.
3
A
Peak forward surge current
IFSM
60Hz half sin waveform、Non-repetitive、
one cycle、Ta=25℃
30
A
Junction temperature(1)
Storage temperature
Tj
Tstg
-
150
-55 ~ 150
℃
℃
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
很抱歉,暂时无法提供与“RBR3MM60ATFTR”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 5+0.82376
- 50+0.66382
- 150+0.58383
- 500+0.52385
- 3000+0.45587
- 国内价格 香港价格
- 1+3.414291+0.41356
- 10+2.5566710+0.30968
- 50+1.6181550+0.19600
- 100+1.18934100+0.14406
- 500+0.76862500+0.09310
- 1000+0.679621000+0.08232
- 2000+0.639172000+0.07742
- 4000+0.631084000+0.07644
- 国内价格 香港价格
- 1+3.414291+0.41356
- 10+2.5566710+0.30968
- 50+1.6181550+0.19600
- 100+1.18934100+0.14406
- 500+0.76862500+0.09310
- 1000+0.679621000+0.08232
- 2000+0.639172000+0.07742
- 4000+0.631084000+0.07644