RCD050N20TL

RCD050N20 Data Sheet 10V Drive Nch MOSFET RCD050N20  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. 2.5 0.75 9.5 1.5 (SC-63) (1) (2) (3) 0.8Min. 0.65 0.9 2.3 2.3 0.5 1.0  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RCD050N20 Type  Inner circuit Taping TL 2500   Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage VGSS ID *3 Drain current Source current (Body Diode) Continuous Pulsed Continuous IDP IS *1 Pulsed *3 ∗1 (1) Gate (2) Drain (3) Source Limits Unit 200 30 5 V V A 20 5 A A A A mJ ISP *1 Avalanche current Avalanche energy IAS EAS *2 *2 20 2.5 1.83 Power dissipation PD *4 20 W Tch Tstg 150 55 to 150 C C Symbol Rth (ch-c)* Limits 6.25 Unit C / W Channel temperature Range of storage temperature (1) (2) (3) 1 BODY DIODE *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, T ch=25C *3 Limited only by maximum temperature allowed. *4 TC=25C  Thermal resistance Parameter Channel to Case * T C=25°C * Limited only by maximum temperature allowed. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.09 - Rev.A Data Sheet 　 RCD050N20  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit - - 100 nA VGS=30V, VDS=0V 200 - - V ID=1mA, VGS=0V IGSS Drain-source breakdown voltage V(BR)DSS Conditions IDSS - - 10 A VDS=200V, VGS=0V VGS (th) 3.25 - 5.25 V VDS=10V, ID=1mA RDS (on)* - 470 618 l Yfs l* 1 2 - S VDS=10V, ID=2.5A Input capacitance Ciss - 380 - pF VDS=25V Output capacitance Coss - 30 - pF VGS=0V Reverse transfer capacitance Crss - 15 - pF f=1MHz Turn-on delay time td(on) * tr * - 17 - ns VDD 100V, ID=2.5A - 15 - ns VGS=10V td(off) * tf * - 22 - ns RL=40 - 11 - ns RG=10 Qg * Qgs * Qgd * - 9.0 - nC VDD 100V, ID=5A - 3.5 3.5 - nC nC VGS=10V Min. Typ. Max. - - 1.5 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge m ID=2.5A, VGS=10V *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Unit V Conditions Is=5A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.09 - Rev.A Data Sheet 　 RCD050N20 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 2.5 5 Ta=25°C Pulsed Ta=25°C Pulsed VGS=10.0V VGS=10.0V 2 4 VGS=8.0V Drain Current : ID [A] Drain Current : ID [A] VGS=8.0V VGS=7.0V 1.5 1 3 VGS=7.0V 2 VGS=6.5V VGS=6.5V 0.5 1 VGS=6.0V VGS=6.0V 0 0 0 0.2 0.4 0.6 0.8 1 0 2 Drain-Source Voltage : VDS [V] 8 10 6 10 VDS=10V ID=1mA pulsed VDS=10V pulsed Gate Threshold Voltage : VGS(th) [V] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Drain Currnt : ID [A] 6 Fig.4 Gate Threshold Voltage vs. Channel Temperature Fig.3 Typical Transfer Characteristics 0.1 0.01 5 4 3 2 0.001 0 2 4 6 8 -50 10 -25 Gate-Source Voltage : VGS [V] 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1.2 10 Static Drain-Source On-State Resistance : RDS(on)[Ω] VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [Ω] 4 Drain-Source Voltage : VDS [V] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 VGS=10V pulsed 1 0.8 5.0A 0.6 2.5A 0.4 0.2 0 0.1 1 -50 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] Drain Current : ID [A] 3/6 2011.09 - Rev.A Data Sheet 　 RCD050N20 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Source Current vs. Source-Drain Voltage 10 10 VGS=0V pulsed Source Current : Is [A] Forward Transfer Admittance:Yfs [S] VDS=10V pulsed 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.01 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 0.1 1 10 0 0.5 1 1.5 Drain Current : ID [A] Source-Drain Voltage : VSD [V] FIg.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.10 Switching Characteristics 1 10000 VDD≒100V VGS=10V RG=10Ω Ta=25°C Pulsed 0.8 ID=2.5A 0.6 Switching Time : t [ns] Static Drain-Source On-State Resistance RDS(on) [Ω] Ta=25°C Pulsed ID=5.0A 0.4 1000 tf 100 td(off) td(on) 10 0.2 tr 0 1 0 2 4 6 8 10 12 14 16 18 20 0.01 0.1 10 Fig.12 Typical Capacitance vs. Drain-Source Voltage Fig.11 Dynamic Input Characteristics 1000 16 Ta=25°C VDD=100V ID=5A Pulsed 14 Ciss 12 Capacitance : C [pF] Gate-Source Voltage : VGS [V] 1 Drain Current : ID [A] Gate-Source Voltage : VGS [V] 10 8 6 100 Coss 10 4 Crss Ta=25°C f=1MHz VGS=0V 2 1 0.01 0 0 2 4 6 8 10 12 14 16 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] 4/6 2011.09 - Rev.A Data Sheet 　 RCD050N20 Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width Fig.13 Maximum Safe Operating Area r（t） 100 Normalized Transient Thermal Resistance : Operation in this area is limited by RDS(on) (VGS = 10V) Drain Current : ID [ A ] 10 1 PW = 100μs 0.1 PW = 1ms Ta=25°C Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) PW = 10ms 0.01 0.1 1 10 100 Ta=25°C Single Pulse 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=43.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 1000 0.001 0.01 0.1 1 10 100 1000 Pulse width ： Pw (s) Drain-Source Voltage : VDS [ V ] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10 5/6 2011.09 - Rev.A Data Sheet 　 RCD050N20  Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 L IAS 2 V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 6/6 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A