RCD080N25

Data Sheet 10V Drive Nch MOSFET RCD080N25  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. 0.9 2.3 (1) (2) (3) 2.3 0.8Min. 0.65 0.5 1.0  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RCD080N25 Type Taping TL 2500   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25C (1) Gate (2) Drain (3) Source (1) (2) (3) Limits 250 30 Unit V V A A A A A mJ W C C 1 BODY DIODE VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg *3 *1 *3 *1 *2 *2 *4 8 32 8 32 4 4.67 20 150 55 to 150 *3 Limited only by maximum channel temperature allowed. *4 TC=25C  Thermal resistance Parameter Channel to Case * T C=25°C * Limited only by maximum channel temperature allowed. Symbol Rth (ch-c)* Limits 6.25 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.11 - Rev.A 2.5 0.75 0.9 1.5 9.5 RCD080N25  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * R DS (on) Data Sheet Unit nA V A V Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=250V, VGS=0V VDS=10V, ID=1mA Min. 250 3 2.7 - Typ. 225 1440 80 40 30 40 40 15 25 10 10 Max. 100 10 5 300 - Drain-source breakdown voltage V(BR)DSS m ID=4A, VGS=10V S pF pF pF ns ns ns ns nC nC nC VDS=10V, ID=4A VDS=25V VGS=0V f=1MHz VDD 125V, ID=4A VGS=10V RL=31.25 RG=10 VDD 125V, ID=8A VGS=10V l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions Is=8A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.11 - Rev.A RCD080N25 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 2 VGS=10.0V 1.8 1.6 1.4 Drain Current : ID [A] 1.2 1 0.8 VGS=6.0V 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] VGS=5.0V VGS=5.5V VGS=6.5V VGS=8.0V VGS=7.0V Ta=25°C pulsed 　 Data Sheet Fig.2 Typical Output Characteristics ( Ⅱ) 2 VGS=10.0V 1.8 1.6 1.4 Drain Current : ID [A] 1.2 1 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] VGS=5.0V VGS=5.5V VGS=6.0V VGS=7.0V VGS=8.0V VGS=6.5V Ta=25°C pulsed Fig.3 Typical Transfer Characteristics 100 VDS=10V pulsed Gate Threshold Voltage : VGS(th) [V] 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 6 Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed 5 Drain Currnt : ID [A] 1 4 0.1 3 0.01 0.001 0 1 2 3 4 5 6 7 8 9 10 Gate-Source Voltage : VGS [V] 2 -50 -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10 Static Drain-Source On-State Resistance : RDS(on) [Ω] VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [Ω] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 0.7 VGS=10V pulsed 0.6 0.5 ID=8A 1 0.4 ID=4A 0.3 0.1 0.2 0.1 0.01 0.01 0 0.1 1 Drain Current : ID [A] 10 100 -50 -25 0 25 50 75 100 125 150 Channel Temperature : T ch [℃] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.11 - Rev.A RCD080N25 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 10 VDS=10V pulsed Forward Transfer Admittance: Yfs [S] 100 Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed 1 Source Current : Is [A] 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.01 0.1 0.001 0.001 0.01 0.01 0.1 Drain Current : ID [A] 1 10 0.0 0.5 1.0 1.5 2.0 Source-Drain Voltage : VSD [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1 Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [Ω] 0.8 1000 Switching Time : t [ns] ID=8.0A 0.6 ID=4.0A 10000 Fig.10 Switching Characteristics tf VDD≒125V VGS=10V RG=10Ω Ta=25°C Pulsed td(off) 100 td(on) 0.4 10 0.2 tr 0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] 1 0.01 0.1 1 10 Drain Current : ID [A] Fig.11 Dynamic Input Characteristics 15 Ta=25°C VDD=125V ID=8A Pulsed Gate-Source Voltage : VGS [V] 1000 10 Capacitance : C [pF] 10000 Fig.12 Typical Capacitance vs. Drain-Source Voltage Ta=25°C f=1MHz VGS=0V Ciss 100 Coss 5 10 Crss 0 0 5 10 15 20 25 30 35 40 Total Gate Charge : Qg [nC] 1 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.11 - Rev.A RCD080N25  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS D.U.T. RG IAS VDD EAS = 1 2 L IAS 2 VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A