RCJ160N20TL

RCJ160N20 Datasheet Nch 200V 16A Power MOSFET Outline VDSS 200V RDS(on) (Max.) 180m ID 16A PD 85W Features (2) LPT(S) (SC-83) (1) (3) Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. ∗1 3) Drive circuits can be simple. 4) Parallel use is easy. (1) 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested (2) 1 BODY DIODE (3) Packaging specifications Packaging Application Switching Power Supply Type Taping Reel size (mm) 330 Tape width (mm) 24 Automotive Motor Drive Quantity (pcs) Automotive Solenoid Drive Taping code 1,000 TL Marking RCJ160N20 Absolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit VDSS 200 V Tc = 25°C ID *1 16 A Tc = 100°C ID *1 8.7 A 64 A Drain - Source voltage Continuous drain current Pulsed drain current ID,pulse *2 Gate - Source voltage VGSS 30 V Avalanche energy, single pulse EAS *3 20.7 mJ Avalanche current IAR *3 8.0 A Tc = 25°C PD 85 W Ta = 25°C *4 PD 1.56 W Tj 150 °C Tstg 55 to 150 °C Power dissipation Junction temperature Range of storage temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/12 2019.05 - Rev.C Data Sheet RCJ160N20 Thermal resistance Values Parameter Unit Symbol Thermal resistance, junction - case Thermal resistance, junction - ambient *4 Soldering temperature, wavesoldering for 10s Min. Typ. Max. RthJC - - 1.46 °C/W RthJA - - 80 °C/W Tsold - - 265 °C Electrical characteristics(Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Unit Conditions VGS = 0V, ID = 1mA Min. Typ. Max. 200 - - - - 10 V VDS = 200V, VGS = 0V Zero gate voltage drain current Tj = 25°C IDSS A VDS = 200V, VGS = 0V - - 100 Tj = 125°C Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance IGSS VGS = 30V, VDS = 0V - - 100 nA VGS (th) VDS = 10V, ID = 1mA 3.25 - 5.25 V VGS = 10V, ID = 8.0A - 135 180 - 295 410 4 8 - RDS(on) *5 VGS = 10V, ID = 8.0A m Tj = 125°C Forward transfer admittance www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. gfs VDS = 10V, ID = 8.0A 2/12 S 2019.05 - Rev.C Data Sheet RCJ160N20 Electrical characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input capacitance Ciss VGS = 0V - 1370 - Output capacitance Coss VDS = 25V - 95 - Reverse transfer capacitance Crss f = 1MHz - 50 - VDD ⋍ 100V, VGS = 10V - 27 - ID = 8.0A - 47 - RL = 12.5 - 42 - RG = 10 - 17 - Turn - on delay time *5 td(on) tr *5 Rise time Turn - off delay time Fall time *5 td(off) tf *5 pF ns Gate Charge characteristics(Ta = 25°C) Values Parameter Symbol *5 Total gate charge Qg Gate - Source charge Qgs *5 Gate - Drain charge Qgd Gate plateau voltage *5 V(plateau) Conditions Unit Min. Typ. Max. VDD ⋍ 100V - 26 - ID = 16A - 10 - VGS = 10V - 11 - VDD ⋍ 100V, ID = 16A - 7.0 - nC V Body diode electrical characteristics (Source-Drain)(Ta = 25°C) Values Parameter Continuous source current Symbol Conditions Typ. Max. - - 16 A - - 64 A VGS = 0V, IS = 16A - - 1.5 V IS = 8.0A di/dt = 100A/s - 85 - ns - 300 - nC *1 IS Pulsed source current ISM *2 Forward voltage VSD *5 *5 Reverse recovery time trr Reverse recovery charge Qrr *5 Unit Min. Tc = 25°C *1 Limited only by maximum temperature allowed. *2 Pw  10s, Duty cycle  1% *3 L ⋍ 500H, VDD = 50V, Rg = 25, starting Tj = 25°C *4 Mounted on a epoxy PCB FR4 (25mm × 27mm × 0.8mm) *5 Pulsed www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/12 2019.05 - Rev.C Data Sheet RCJ160N20 Electrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 120 100 PW = 1ms 10 Drain Current : ID [A] Power Dissipation : PD/PD max. [%] PW = 100s 80 60 40 1 Operation in this area is limited by RDS(on) 0.1 20 PW = 10ms Ta=25ºC Single Pulse 0.01 0 0 25 50 75 100 125 150 0.1 175 1 10 100 1000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] Normalized Transient Thermal Resistance : r(t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 10 Ta=25ºC Single Pulse Rth(j-c)(t) = r(t)×Rth(ch-c) Rth(j-c) = 80ºC/W 1 0.1 0.01 0.0001 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.01 1 100 Pulse Width : PW [s] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 4/12 2019.05 - Rev.C Data Sheet RCJ160N20 Electrical characteristic curves Fig.5 Avalanche Energy Derating Curve vs Junction Temperature Fig.4 Avalanche Current vs Inductive Load 120 100 Avalanche Energy : EAS / EAS max. [%] Avalanche Current : IAS [A] VDD=50V,RG=25 VGF=10V,VGR=0V Starting Tch=25ºC 10 1 0.1 0.01 0.1 1 10 100 80 60 40 20 0 0 100 Coil Inductance : L [mH] 50 75 100 125 150 175 Junction Temperature : Tj [°C] Fig.7 Typical Output Characteristics(II) Fig.6 Typical Output Characteristics(I) 16 8 VGS=10.0V Ta=25ºC Pulsed 14 12 Drain Current : ID [A] VGS=8.0V VGS=7.0V 4 Ta=25ºC Pulsed VGS=8.0V VGS=10.0V 6 Drain Current : ID [A] 25 2 VGS=6.0V 10 8 VGS=7.0V 6 4 VGS=5.0V VGS=6.0V 2 VGS=5.0V 0 0 0 0.2 0.4 0.6 0.8 0 1 4 6 8 10 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2 5/12 2019.05 - Rev.C Data Sheet RCJ160N20 Electrical characteristic curves Fig.9 Typical Transfer Characteristics 280 100 VDS= 10V VGS = 0V ID = 1mA 270 260 10 250 Drain Current : ID [A] Normarize Drain - Source Breakdown Voltage : V(BR)DSS [V] Fig.8 Breakdown Voltage vs. Junction Temperature 240 230 220 210 200 1 Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= 25ºC 0.1 0.01 190 180 0.001 -50 0 50 100 150 0 Junction Temperature : Tj [°C] 6 8 10 Fig.11 Transconductance vs. Drain Current 100 5.5 VDS= 10V VDS = 10V ID = 1mA Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 4 Gate - Source Voltage : VGS [V] Fig.10 Gate Threshold Voltage vs. Junction Temperature 5.0 2 4.5 4.0 3.5 3.0 0 25 50 75 100 125 150 Junction Temperature : Tj [°C] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1 Ta= 25ºC Ta=25ºC Ta=75ºC Ta=125ºC 0.1 0.01 0.01 2.5 -50 -25 10 0.1 1 10 100 Drain Current : ID [A] 6/12 2019.05 - Rev.C Data Sheet RCJ160N20 Electrical characteristic curves Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 1000 Ta=25ºC 350 300 ID = 8.0A ID = 16A 250 200 150 100 50 0 0 5 10 15 20 Static Drain - Source On-State Resistance : RDS(on) [m] 400 Static Drain - Source On-State Resistance : RDS(on) [m] Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(I) Gate - Source Voltage : VGS [V] Ta=25ºC VGS = 10V 100 10 0.01 0.1 1 10 100 Drain Current : ID [A] Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [m] 350 300 VGS = 10V ID = 8.0A 250 200 150 100 50 0 -50 0 50 100 150 Junction Temperature : Tj [ºC] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 7/12 2019.05 - Rev.C Data Sheet RCJ160N20 Electrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Fig.16 Drain Current Derating Curve 120 VGS= 10V 100 Drain Current Dissipation : ID/ID max. (%) Static Drain - Source On-State Resistance : RDS(on) [m] 1000 100 Ta=125ºC Ta=75ºC Ta=25ºC Ta= 25ºC 80 60 40 20 0 10 0.01 0.1 1 10 0 100 Drain Current : ID [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 25 50 75 100 125 150 175 Junction Temperature : Tj [ºC] 8/12 2019.05 - Rev.C Data Sheet RCJ160N20 Electrical characteristic curves Fig.17 Typical Capacitance vs. Drain - Source Voltage Fig.18 Switching Characteristics 10000 10000 Ta = 25ºC f = 1MHz VGS = 0V tf Ciss 1000 Switching Time : t [ns] Capacitance : C [pF] Ta=25ºC VDD= 100V VGS= 10V RG=10 1000 100 Coss td(off) 100 td(on) 10 tr Crss 10 1 0.01 0.1 1 10 100 1000 0.01 Drain - Source Voltage : VDS [V] 0.1 1 10 100 Drain Current : ID [A] Fig.19 Dynamic Input Characteristics 20 Ta=25ºC VDD= 100V ID= 16A RG=10 Gate - Source Voltage : VGS [V] 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 Total Gate Charge : Qg [nC] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 9/12 2019.05 - Rev.C Data Sheet RCJ160N20 Electrical characteristic curves Fig21 Reverse Recovery Time vs.Source Current Fig.20 Source Current vs. Source - Drain Voltage 1000 100 Ta=25ºC di / dt = 100A / s VGS = 0V Reverse Recovery Time : trr [ns] VGS=0V Source Current : IS [A] 10 Ta=125ºC Ta=75ºC Ta=25ºC Ta= 25ºC 1 0.1 0.01 100 10 0.0 0.5 1.0 1.5 0.1 10 100 Source Current : IS [A] Source-Drain Voltage : VSD [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1 10/12 2019.05 - Rev.C Data Sheet RCJ160N20 Measurement circuits Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms Pulse width ID VDS RL D.U.T. 50% 10% VDD RG 90% 50% 10% VGS VDS 10% 90% td(on) ton Fig.2-1 Gate Charge Measurement Circuit VGS tf toff Fig.2-2 Gate Charge Waveform VG ID VDS Qg RL VGS D.U.T. IG(Const.) 90% td(off) tr Qgs VDD Qgd Charge Fig.3-1 Avalanche Measurement Circuit VGS IAS D.U.T. RG Fig.3-2 Avalanche Waveform VDS L V(BR)DSS IAS VDD VDD EAS = www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 11/12 1 2 2 L IAS V(BR)DSS V(BR)DSS - VDD 2019.05 - Rev.C Data Sheet RCJ160N20 Dimensions (Unit : mm) D A2 A B L2 c1 E L3 LPTS H A1 L4 Lp b2 e b L1 L b3 x c A3 B A l3 l1 e b6 b5 l2 Patterm of terminal position areas DIM A1 A2 A3 b b2 b3 c c1 D E e HE L L1 L2 L3 L4 Lp x DIM b5 b6 l1 l2 l3 MILIMETERS MIN MAX 0.00 0.30 4.30 4.70 0.25 0.68 0.98 8.90 1.14 1.44 0.30 0.60 1.10 1.50 9.80 10.40 8.80 9.20 2.54 12.80 13.40 2.70 3.30 0.90 1.50 1.10 7.25 1.00 0.90 1.50 0.25 MILIMETERS MIN MAX 1.23 10.40 2.10 7.55 13.40 INCHES MIN 0 0.169 MAX 0.012 0.185 0.01 0.027 0.039 0.35 0.045 0.012 0.043 0.386 0.346 0.057 0.024 0.059 0.409 0.362 0.10 0.504 0.106 0.035 0.528 0.13 0.059 0.043 0.285 0.039 0.035 - 0.059 0.01 INCHES MIN - MAX 0.049 0.409 0.083 0.297 0.528 Dimension in mm/inches www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 12/12 2019.05 - Rev.C Notice Precaution on using ROHM Products 1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. 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Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001