RCJ450N20

Data Sheet 10V Drive Nch MOSFET RCJ450N20  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. 13.1 9.0 3.0 1.0 1.24 0.78 (3) 5.08 (1) (2) 2.7  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RCJ450N20 Type Taping TL 1000   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25C (1) Gate (2) Drain (3) Source (1) (2) 1.2 2.54 0.4 (3) Limits 200 30 45 180 45 180 22.5 160 40 150 55 to 150 Unit V V A A A A A mJ W C C 1 BODY DIODE VDSS VGSS Continuous Pulsed Continuous Pulsed ID *3 IDP *1 IS *3 ISP *1 IAS *2 EAS *2 PD *4 Tch Tstg *3 Limited only by maximum temperature allowed. *4 TC=25C  Thermal resistance Parameter Channel to Case * T C=25°C * Limited only by maximum temperature allowed. Symbol * Rth (ch-c) Limits 3.12 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A RCJ450N20  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) RDS (on) * l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 200 3.0 17.0 Typ. 42 4200 270 160 52 210 90 70 80 28 28 Max. 100 1 5.0 55 Unit nA V A V Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=200V, VGS=0V VDS=10V, ID=1mA Data Sheet Drain-source breakdown voltage V(BR)DSS m ID=22.5A, VGS=10V S pF pF pF ns ns ns ns nC nC nC VDS=10V, ID=22.5A VDS=25V VGS=0V f=1MHz VDD 100V, ID=22.5A VGS=10V RL=4.4 RG=10 VDD 100V, ID=45A VGS=10V Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions Is=45A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.10 - Rev.A RCJ450N20 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 20 Ta=25°C pulsed VGS=10.0V VGS=8.0V VGS=7.0V 15 Drain Current : ID [A] 　 Data Sheet Fig.2 Typical Output Characteristics ( Ⅱ) 45 40 35 Drain Current : ID [A] 30 25 20 15 10 5 0 VGS=5.5V VGS=6.5V VGS=6.0V VGS=10.0V VGS=8.0V Ta=25°C pulsed 10 VGS=6.5V VGS=7.0V 5 VGS=6.0V VGS=5.5V 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 100 VDS=10V pulsed Gate Threshold Voltage : VGS(th) [V] 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 8 10 Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed Drain Currnt : ID [A] 1 6 0.1 4 0.01 2 0.001 0 2 4 6 8 10 Gate-Source Voltage : VGS [V] 0 -50 -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 120 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] 100 ID=45A 80 100 60 ID=22A 10 40 20 1 0.01 0 0.1 1 Drain Current : ID [A] 10 100 -50 -25 0 25 50 75 100 125 150 Channel Temperature : T ch [℃] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.10 - Rev.A RCJ450N20 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=10V pulsed 10 10 Forward Transfer Admittance Yfs [S] Source Current : IS [A] 100 Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.1 0.01 0.001 0.001 0.01 0.01 0.1 1 10 100 0 0.5 1 1.5 2 Drain Current : ID [A] Source-Drain Voltage : VSD [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 200 180 Static Drain-Source On-State Resistance RDS(on) [mW ] 160 140 ID=45.0A 120 100 80 60 100 40 20 0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] 10 0.01 Ta=25°C pulsed ID=22.5A 10000 Switching Time : t [ns] tf 100000 Fig.10 Switching Characteristics VDD≒100V VGS=10V RG=10Ω Ta=25°C Pulsed 1000 td(off) tr td(on) 0.1 1 Drain Current : ID [A] 10 100 Fig.11 Dynamic Input Characteristics 20 Ta=25°C VDD=100V ID=45A Pulsed 15 Gate-Source Voltage : VGS [V] Capacitance : C [pF] 1000 10000 Fig.12 Typical Capacitance vs. Drain-Source Voltage Ciss 10 Coss 100 Crss Ta=25°C f=1MHz VGS=0V 5 0 0 50 100 150 200 Total Gate Charge : Qg [nC] 10 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.10 - Rev.A RCJ450N20 　 Data Sheet Fig.13 Reverse Recovery Time vs. Source Current 1000 Ta=25°C Vgs=0V di/dt=100A/us Pulsed Reverse Recovery Time : trr [ns] 1000 Fig.14 Maximum Safe Operating Area 100 Drain Current : ID [ A ] 10 Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100μs 100 PW = 1ms PW = 10ms 1 0.1 Ta=25°C Single Pulse 10 0 1 10 100 Source Current : IS [A] 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C Single Pulse 1 0.1 0.01 0.001 Rth(ch-a)=34.1°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.10 - Rev.A RCJ450N20  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS D.U.T. RG IAS VDD EAS = 1 2 L IAS 2 VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A