RDR005N25TL

RDR005N25 Nch 250V 0.5A Power MOSFET Datasheet lOutline 250V RDS(on) (Max.) 8.8W ID 0.5A PD 1.0W (3) (1) (2) lInner circuit e N co ew m m D es en ig de ns d f lFeatures TSMT3 SOT-346T (SC-96) or VDSS 1) Low on-resistance. (1) Gate (2) Source (3) Drain 2) Fast switching speed. 3) Drive circuits can be simple. *1 BODY DIODE *2 ESD PROTECTION DIODE 4) Parallel use is easy. 5) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging lApplication Reel size (mm) Tape width (mm) Switching Power Supply Taping 180 8 Type Automotive Motor Drive Basic ordering unit (pcs) 3,000 Automotive Solenoid Drive Taping code TL Marking EE lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit VDSS 250 V Tc = 25°C ID *1 0.5 A Tc = 100°C ID *1 0.27 A ID,pulse *2 2.0 A VGSS 20 V PD *3 1.0 W PD *4 0.54 W Tj 150 °C Tstg -55 to +150 °C R Drain - Source voltage N ot Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/12 2013.02 - Rev.A Data Sheet RDR005N25 lThermal resistance Values Parameter Symbol Typ. Max. RthJA *3 - - 125 °C/W RthJA *4 - - 232 °C/W or Thermal resistance, junction - ambient Unit Min. e N co ew m m D es en ig de ns d f lElectrical characteristics (Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Conditions VGS = 0V, ID = 1mA Min. Typ. Max. 250 - - - - 25 Unit V VDS = 250V, VGS = 0V Zero gate voltage drain current IDSS Tj = 25°C VDS = 250V, VGS = 0V - - 100 mA Tj = 125°C Gate - Source leakage current Gate threshold voltage IGSS VGS = 20V, VDS = 0V - - 10 mA VGS (th) VDS = 10V, ID = 1mA 1.0 - 3.0 V VGS = 10V, ID = 0.25A - 6.8 8.8 7.2 9.4 7.4 9.6 - 12.8 18.0 0.21 0.42 - VGS = 4.5V, ID = 0.25A Static drain - source on - state resistance RDS(on) *5 VGS = 4V, ID = 0.25A W VGS = 10V, ID = 0.25A R Tj = 125°C gfs VDS = 10V, ID = 0.25A S N ot Forward transfer admittance www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 2/12 2013.02 - Rev.A Data Sheet RDR005N25 lElectrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Ciss VGS = 0V - 70 - Output capacitance Coss VDS = 25V - 10 - Reverse transfer capacitance Crss f = 1MHz - 3 - VDD ⋍ 125V, VGS = 10V - 6 - Rise time Turn - off delay time Fall time td(on) *5 tr *5 ID = 0.25A - 10 - td(off) *5 RL = 500W - 21 - tf *5 RG = 10W - 90 - e N co ew m m D es en ig de ns d f Turn - on delay time pF or Input capacitance ns lGate Charge characteristics (Ta = 25°C) Values Parameter Symbol Conditions Min. Typ. Max. Total gate charge Qg *5 VDD ⋍ 125V - 3.5 - Gate - Source charge Qgs *5 ID = 0.5A - 0.55 - Gate - Drain charge Qgd VGS = 10V - 1.0 - VDD ⋍ 125V, ID = 0.5A - 3.0 - Gate plateau voltage *5 V(plateau) Unit nC V lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Values R Parameter N ot Continuous source current Symbol IS *1 Pulsed source current ISM *2 Forward voltage VSD *5 Reverse recovery time trr *5 Reverse recovery charge Qrr *5 Conditions Unit Min. Typ. Max. - - 0.5 A - - 2.0 A VGS = 0V, IS = 0.5A - - 1.2 V IS = 0.25A di/dt = 100A/ms - 60 - ns - 60 - nC Tc = 25°C *1 Limited only by maximum temperature allowed. *2 Pw  10ms, Duty cycle  1% *3 Mounted on a ceramic board (30×30×0.8mm) *4 Mounted on a FR4 (12×20×0.8mm) *5 Pulsed www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 3/12 2013.02 - Rev.A Data Sheet RDR005N25 lElectrical characteristic curves Fig.2 Normalized Transient Thermal Resistance vs. Pulse Width 80 60 40 20 0 0 Ta=25ºC or 100 10 1 e N co ew m m D es en ig de ns d f Power Dissipation : PD/PD max. [%] 120 Normalized Transient Thermal Resistance : r(t) Fig.1 Power Dissipation Derating Curve 25 50 75 100 125 150 175 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.1 0.01 0.001 0.0001 Rth(ch-a)=125ºC/W Rth(ch-a)(t)=r(t)×Rth(ch-a) Mounted on ceramic board (30mm × 30mm × 0.8mm) 0.01 1 100 Pulse Width : PW [s] N ot R Junction Temperature : Tj [°C] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 4/12 2013.02 - Rev.A Data Sheet RDR005N25 lElectrical characteristic curves Fig.3 Typical Output Characteristics(I) Fig.4 Typical Output Characteristics(II) 0.1 0.5 Drain Current : ID [A] VGS=4.0V VGS=4.5V 0.06 VGS=3.0V VGS=2.5V 0.04 0.02 or 0.4 VGS=10.0V VGS=4.5V VGS=4.0V 0.3 VGS=3.0V e N co ew m m D es en ig de ns d f Drain Current : ID [A] 0.08 VGS=10.0V Ta=25ºC Pulsed Ta=25ºC Pulsed 0.2 VGS=2.5V 0.1 VGS=2.0V VGS=2.0V 0 0 0 0.2 0.4 0.6 0.8 0 1 2 4 6 8 10 Drain - Source Voltage : VDS [V] N ot R Drain - Source Voltage : VDS [V] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 5/12 2013.02 - Rev.A Data Sheet RDR005N25 lElectrical characteristic curves Fig.6 Typical Transfer Characteristics 340 1 VDS= 10V Drain Current : ID [A] 320 300 280 260 240 220 or VGS = 0V ID = 1mA 0.1 e N co ew m m D es en ig de ns d f Normarize Drain - Source Breakdown Voltage : V(BR)DSS [V] Fig.5 Breakdown Voltage vs. Junction Temperature Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 0.01 0.001 -50 0 50 100 150 0 Junction Temperature : Tj [°C] 1.0 5 VDS= 10V Transconductance : gfs [S] 1.5 4 1 R 2.0 3 Fig.8 Transconductance vs. Drain Current VDS = 10V ID = 1mA N ot Gate Threshold Voltage : VGS(th) [V] 2.5 2 Gate - Source Voltage : VGS [V] Fig.7 Gate Threshold Voltage vs. Junction Temperature 3.0 1 0.5 0.0 -50 -25 0 25 50 75 0.01 0.01 100 125 150 Junction Temperature : Tj [°C] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 0.1 Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC 0.1 1 Drain Current : ID [A] 6/12 2013.02 - Rev.A Data Sheet RDR005N25 lElectrical characteristic curves Fig.9 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.10 Static Drain - Source On - State Resistance vs. Drain Current(I) 100 30 ID = 0.5A 20 ID = 0.25A 10 0 0 Ta=25ºC or 40 Static Drain - Source On-State Resistance : RDS(on) [W] Ta=25ºC VGS= 4V VGS= 4.5V VGS= 10V e N co ew m m D es en ig de ns d f Static Drain - Source On-State Resistance : RDS(on) [W] 50 2 4 6 8 10 Gate - Source Voltage : VGS [V] 10 1 0.01 0.1 1 Drain Current : ID [A] Fig.11 Static Drain - Source On - State Resistance vs. Junction Temperature 18 16 R 14 VGS = 10V ID = 0.25A 12 10 8 N ot Static Drain - Source On-State Resistance : RDS(on) [W] 20 6 4 2 0 -50 0 50 100 150 Junction Temperature : Tj [ºC] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 7/12 2013.02 - Rev.A Data Sheet RDR005N25 lElectrical characteristic curves Fig.12 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(II) 100 10 1 0.01 VGS= 4.5V Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC or Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC Static Drain - Source On-State Resistance : RDS(on) [W] VGS= 10V e N co ew m m D es en ig de ns d f Static Drain - Source On-State Resistance : RDS(on) [W] 100 0.1 1 10 1 0.01 0.1 Drain Current : ID [A] Drain Current : ID [A] Fig.14 Static Drain - Source On - State Resistance vs. Drain Current(III) Fig.15 Drain Current Derating Curve 120 VGS= 4V Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC R Drain Current Dissipation : ID/ID max. (%) 100 10 N ot Static Drain - Source On-State Resistance : RDS(on) [W] 100 1 1 0.01 80 60 40 20 0 0.1 1 0 Drain Current : ID [A] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 25 50 75 100 125 150 175 Junction Temperature : Tj [ºC] 8/12 2013.02 - Rev.A Data Sheet RDR005N25 lElectrical characteristic curves Fig.16 Typical Capacitance vs. Drain - Source Voltage Fig.17 Switching Characteristics 10000 Ta = 25ºC f = 1MHz VGS = 0V tf 1000 Switching Time : t [ns] Coss 10 Ciss 1 td(off) e N co ew m m D es en ig de ns d f Capacitance : C [pF] 100 100 tr 10 Crss 0.1 0.01 Ta=25ºC VDD= 125V VGS= 10V RG=10W or 1000 td(on) 1 0.1 1 10 100 0.01 1000 Drain - Source Voltage : VDS [V] 0.1 1 Drain Current : ID [A] Fig.18 Dynamic Input Characteristics R Ta=25ºC VDD= 125V ID= 0.5A RG=10W 5 N ot Gate - Source Voltage : VGS [V] 10 0 0 1 2 3 4 5 Total Gate Charge : Qg [nC] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 9/12 2013.02 - Rev.A Data Sheet RDR005N25 lElectrical characteristic curves Fig20 Reverse Recovery Time vs.Source Current Fig.19 Source Current vs. Source - Drain Voltage 1000 1 0.1 or Reverse Recovery Time : trr [ns] Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 100 e N co ew m m D es en ig de ns d f Source Current : IS [A] VGS=0V 10 Ta=25ºC di / dt = 100A / ms VGS = 0V 1 0.01 0.0 0.5 1.0 0.1 1.5 1 Source Current : IS [A] N ot R Source-Drain Voltage : VSD [V] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 10/12 2013.02 - Rev.A Data Sheet RDR005N25 lMeasurement circuits Fig.1-2　Switching Waveforms e N co ew m m D es en ig de ns d f or Fig.1-1 Switching Time Measurement Circuit Fig.2-2 Gate Charge Waveform N ot R Fig.2-1 Gate Charge Measurement Circuit www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 11/12 2013.02 - Rev.A Data Sheet RDR005N25 lDimensions (Unit : mm) D A TSMT3 c e N co ew m m D es en ig de ns d f L1 Lp or HE E Q e b x S A A3 e1 l1 A A1 A2 e S b2 Pattern of terminal position areas [Not a recommended pattern of soldering pads] DIM N ot R A A1 A2 A3 b c D E e HE L1 Lp Q x DIM b2 e1 l1 MILIMETERS MIN MAX 1.00 0.00 0.10 0.75 0.95 0.25 0.35 0.50 0.10 0.26 2.80 3.00 1.50 1.80 0.95 2.60 3.00 0.30 0.60 0.40 0.70 0.05 0.25 0.20 INCHES MIN 0.000 0.030 MAX 0.039 0.004 0.037 0.010 0.014 0.004 0.110 0.059 0.020 0.010 0.118 0.071 0.037 0.102 0.012 0.016 0.002 - MILIMETERS MIN MAX 0.70 2.10 0.90 0.118 0.024 0.028 0.010 0.008 INCHES MIN - MAX 0.028 0.083 - 0.035 Dimension in mm / inches www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 12/12 2013.02 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. or 2) Before you use our Products, please contact our sales representative and verify the latest specifications : e N co ew m m D es en ig de ns d f 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. R 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. N ot 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. R1102A