RES100N03

RES100N03 Transistors Switching (30V, 10A) RES100N03 Features 1) Low Qg. 2) Low on-resistance. 3) Exellent resistance to damage from static electricity. External dimensions (Units : mm) Max.1.75 + 5.0− 0.2 (5) (4) (8) Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) ROHM : SOP8 (4) (1) (2) (3) (4) ∗ (1) (2) (3) ∗Gate Protection Diode. (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain ∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. Absolute maximum ratings (Ta = 25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Reverse Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗ IDR IDRP ∗ Is Isp PD Tch Tstg ∗ Limits 30 ±20 10 40 10 40 1.3 5.2 2 150 −55~+150 Unit V V A A A A A A W Total Power Dissipation (TC=25°C) Channel Temperature Storage Temperature ∗PW≤10µs, Duty cycle≤1% °C °C + 0.2− 0.1 Structure Silicon N-channel MOS FET + 3.9− 0.15 + 6.0− 0.3 + 0.5− 0.1 (1) 0.15 + 1.5− 0.1 Each lead has same dimensions 1.27 + 0.4− 0.1 0.1 RES100N03 Transistors Thermal resistance (Ta = 25°C) Parameter Channel to Ambient Symbol Rth (ch-A) Limits 62.5 Unit °C / W Electrical characteristics (Ta = 25°C) Parameter Gate-Source Leakage Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge ∗Pulsed Symbol IGSS V (BR)DSS IDSS VGS (th) RDS (on)∗ l Yfs l ∗ Ciss Coss Crss td(on) tr ∗ ∗ Min. − 30 − 1.0 − − − 10 − − − − − − − − − − Typ. − − − − 10 15 16 − 1600 900 280 17 50 75 55 28.5 4.9 5.8 Max. ±10 − 1 2.5 13 20 21 − − − − − − − − 57.0 − − Unit µA V µA V mΩ Test Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=10A, VGS=10V ID=10A, VGS=4.5V ID=10A, VGS=4V ID=10A, VDS=10V VDS=10V VGS=0V f=1MHz ID=5A, VDD 5V VGS=10V RL=3Ω RGS=10Ω VDD=15V VGS=10V ID=10A S pF pF pF ns ns ns ns nC nC nC td(off) ∗ tf ∗ Qg ∗ Qgs ∗ Qgd ∗ Body diode characteristics (Source-Drain Characteristics) (Ta = 25°C) Parameter Forward Voltage Reverse Recovery Time Reverse Recovery Charge ∗Pulsed Symbol VSD ∗ trr ∗ Qrr ∗ Min. − − − Typ. − 260 290 Max. 1.5 − − Unit V ns nC Test Conditions Is=5.2A, VGS=0V IDR=5.2A, VGS=0V di/dt=100A/µs RES100N03 Transistors Electrical characteristic curves FORWARD TRANSFER ADMITTANCE : I YfS I (S) 10 REVERSE DREIN CURRENT : IDR(A) Ta=125°C 75°C 25°C 1 −25°C 10 Ta=−25°C 25°C 75°C 125°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VDS=0V Pulsed 100 VDS=10V Pulsed 1 VGS=10V Pulsed 0.1 Ta=125°C 75°C 25°C −25°C 0.01 1 0.1 0.1 0.01 0.0 0.5 1.0 1.5 0.01 0.01 0.1 1 10 0.001 0.1 1 DRAIN CURRENT : I D(A) 10 SOURCE - DRAIN VOLTAGE : VGS(V) DRAIN CURRENT : I D(A) Fig.1 Reverse Drein Current vs. Source - Drain Voltage Fig.2 Forward Transfer Admittance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (Ι) 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VGS=4V Pulsed 0.020 0.1 Ta=125°C 75°C 25°C −25°C 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.000 −50 −25 0 25 50 75 100 125 150 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VGS=10V 0.018 ID=10A Pulsed 0.016 0.050 Ta=25°C Pulsed 0.040 0.030 ID =10A 5A 0.020 0.01 0.010 0.001 0.1 1 DRAIN CURRENT : I D(A) 10 0.000 0 2 4 6 8 10 12 14 16 18 20 CHANNEL TEMPERATURE : Tch (°C) GATE-SOURCE VOLTAGE : VGS(V) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.5 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage GATE THRESHOLD VOLTAGE : VGS(th) (V) 4.0 DRAIN-SOURCE VOLTAGE : VDS (V) 3.0 CAPACITANCE : C (pF) 25 VGS 20 VDS 15 10 5 0 0 5 Ta=25°C VDD=24V ID=7A Pulsed 0 40 48 10 Ciss 1000 Coss Crss 100 2.0 1.0 0.0 −50 −25 0 25 50 75 100 125 150 10 0.1 1 10 100 8 16 24 32 CHANNEL TEMPERATURE : Tch (°C) DRAIN-SOURCE VOLTAGE : VDS (V) TOTAL GATE CHARGE : Qg (nC) Fig.7 Gate Threshold Voltage vs. Channel Temperature Fig.8 Typical Capacitance vs. Drain-Source Voltage Fig.9 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS (V) VDS=10V ID=1mA Pulsed 10000 Ta=25°C f=1MHz VGS=0V Pulsed 30 15 RES100N03 Transistors 1000 Ta=25°C VDD=30V VGS=10V RG=10Ω Pulsed 20 18 DRAIN CURRENT : ID (A) SWITCHING TIME : t (ns) 16 14 12 10 8 6 4 2 VGS=6V VGS=4.5V VGS=4V VGS=3.5V Ta=25°C Pulsed VGS=3V td (off) 100 tf tr td (on) 10 VGS=2.5V 1 0.1 1 DRAIN CURRENT : I D (A) 10 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Switching Characteristics Fig.11 Typical Output Characteristics 10 NORMALIZED TRANSIENT : r (t) THERMAL RESISTANCE 1 D=1 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 D=Single Tc=25°C θth(ch-c) (t)=r(t) θth(ch-c) θth(ch-c)=6.25°C / W PW D=PW T 0.1 0.01 0.001 10µ 100µ T 1m 10m 100m 1 10 100 PULSE WIDTH : PW (s) Fig.12 Normalized Transient Thermal Resistance vs. Pulse Width