RF04UA2D

Super Fast Recovery Diode RF04UA2D  Series Standard Fast Recovery  Dimensions (Unit : mm)  Land size figure (Unit : mm) 1.9 0.95 0.95  Applications High frequency rectification 1.0 min.  Features 1)Surface mounting type (TSMD6) 2)High reliability 0.7 TSMD6 0.8  Structure (6) (5) (4)  Construction Silicon epitaxial planer (1) (2) (3)  Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1 　　　　　 0 1.75±0.1 0.3±0.1 3.5±0.05 3.2±0.08 8.0±0.2 2.4 3.2±0.08 1.1±0.08 0.45 0.35 0.35 0.45 3.2±0.08 4.0±0.1 φ1.1±0.1  Absolute maximum ratings (Ta=25 C) Parameter Repetitive peak Reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io/2 IFSM Tj Tstg Conditions Direct voltage Glass epoxy substrate mounted Ta=25 C 60Hz half sin wave,resistive load Tc=130 C Limits 200 200 0.4 1 0～0.5 5.5±0.2 Unit V V A A 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 C 150 C -40 to +150 C (* Standard of per diode)  Electrical characteristics (Tj=25 C) Parameter Symbol VF Forward voltage IR Reverse current Reverse recovery time trr Conditions IF=0.2A VR=200V IF=0.5A,IR=1A,Irr=0.25×IR Min. － － － Typ. 0.86 0.01 11 Max. 0.98 10 25 Unit V A ns www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.01 - Rev.A RF04UA2D Electrical characteristics curves 　 Data Sheet 10 10000 Tj=150 C 100 f=1MHz FORWARD CURRENT : IF(A) 1 Tj=125 C 100 Tj=75 C CAPACITANCE BETWEEN TERMINALS : Ct(pF) 200 Tj=150 C REVERSE CURRENT : IR(nA) 1000 Tj=125 C 10 0.1 Tj=25 C Tj=75 C 10 Tj=25 C 1 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 0 50 100 150 1 0 5 10 15 20 25 30 FORWARD VOLTAGE : VF(V) VF-IF CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 880 1000 FORWARD VOLTAGE : VF(mV) REVERSE CURRENT : IR(nA) 870 100 CAPACITANCE BETWEEN TERMINALS : Ct(pF) Tj=25 C IF=0.2A n=30pcs 30 Tj=25 C VR=200V n=30pcs 20 AVE:10.9pF Tj=25 C f=1MHz VR=0V n=10pcs 860 10 AVE:1.3n 850 10 840 1 AVE : 830 0.1 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 30 30 1000 RESERVE RECOVERY TIME : trr(ns) PEAK SURGE FORWARD CURRENT : IFSM(A) 20 8.3ms AVE:10.2A 20 15 10 5 0 AVE:10.2ns PEAK SURGE FORWARD CURRENT : IFSM(A) Ifsm 1cyc 25 Tj=25 C IF=0.5A IR=1A Irr=0.25×IR n=10pcs Ifsm 100 8.3ms 8.3ms 1cyc 10 10 0 1 1 10 100 IFSM DISRESION MAP trr DISPERSION MAP NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1000 30 10000 Ifsm PEAK SURGE FORWARD CURRENT : IFSM(A) t 100 25 20 15 10 5 0 AVE : 3.9kV TRANSIENT THAERMAL IMPEDANCE : Rth ( C/W) ELECTROSTATIC DISCHARGE TEST ESD(KV) AVE : 21.9kV IM=10mA 1000 IF=1A 1ms time 300s 100 Rth(j-a) 10 Rth(j-c) 10 On glass-epoxy board 1 0.001 1 1 10 100 C=200pF R=0 C=100pF R=1.5k  0.01 0.1 1 10 100 1000 TIME : t(ms) IFSM-t CHARACTERISTICS ESD DISPERSION MAP TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.01 - Rev.A RF04UA2D 　 0A 0V t T Io VR D=t/T VR=200V Tj=150 C AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 0A 0V 0.35 D.C. 0.3 D.C. D=0.8 0.25 0.2 half sin wave 0.15 0.1 0.05 0 D=0.2 D=0.5 D=0.8 Data Sheet Io t T VR D=t/T VR=200V Tj=150 C 0.25 D.C. 0.2 D=0.8 D=0.5 0.15 half sin wave D=0.2 0.1 D=0.1 D=0.05 0.35 0.3 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) FORWARD POWER DISSIPATION : Pf(W) 0.25 0.2 0.15 0.1 0.05 0 half sin wave D=0.5 D=0.2 0.05 D=0.05 D=0.1 D=0.05 0 30 D=0.1 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0 30 60 90 120 150 60 90 120 150 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS AMBIENT TEMPERATURE : Ta( C) Derating Curve"(Io-Ta) CASE TEMPARATURE : Tc( C) Derating Curve(Io-Tc) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.01- Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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