RF05VA1S_11

Data Sheet Fast Recovery Diode RF05VA1S lApplications General rectification lDimensions (Unit : mm) 0.17±0.1 　　 0.05 1 .3±0.05 lLand size figure (Unit : mm) 1.1 1.9±0.1 2.5±0.2 lFeatures 1)Small mold type. (TUMD2) 2)Ultra high switching speed 3)Low VF TUMD2 lConstruction Silicon epitaxial planer 0.8±0.05 lStructure ROHM : TUMD2 　　　 0.1 dot (year week factory) + day 0.6±0.2 lTaping dimensions (Unit : mm) 4 .0±0.1 2.0±0.05 3.5±0.05 1.75±0.1 φ 1.55±0.1 　　　　　 0 0.25±0.05 8.0±0.2 1.43±0.05 4.0±0.1 φ 1.0±0.2 　　　　　0 2.75 2.8±0.05 0.9±0.08 lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1)On the Glass epoxy substrate lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current Reverse recovery time IR trr Limits 100 100 0.5 6 150 -55 to +150 Unit V V A A C C Min. - Typ. - Max. 0.98 10 25 Unit V μA ns IF=0.5A Conditions VR=100V IF=0.5A,IR=1A,Irr=0.25*IR www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A 0.8 0.5 2.0 RF05VA1S 　 Data Sheet 10 1000 Tj=150°C REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) Tj=150°C 1 Tj=125°C 100 Tj=125°C Tj=75°C 10 Tj=25°C 0.1 Tj=25°C 1 Tj=75°C 0.01 300 400 500 600 700 800 900 1000 1100 1200 1300 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 0 20 40 60 80 100 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 100 f=1MHz FORWARD VOLTAGE:VF(mV) 850 IF=0.5A 840 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 830 10 820 AVE:819.3mV 810 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 800 VF DISPERSION MAP 10 Ta=25°C REVERSE CURRENT:IR(nA) VR=100V n=20pcs 30 29 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 28 27 26 25 24 23 22 21 AVE:28.18pF f=1MHz VR=0V 1 AVE:0.80nA 0.1 IR DISPERSION MAP 20 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RF05VA1S 　 Data Sheet 30 30 IF=0.5A IR=1A Irr=0.25×IR PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 8.3ms REVERSE RECOVERY TIME:trr(ns) 25 1cyc 25 20 20 15 15 10 AVE:12.2A 5 10 AVE:12.2ns 5 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 100 100 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms IFSM t 1cyc 10 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 Rth(j-a) On glass-epoxy substrate soldering land 6mm□ FORWARD POWER DISSIPATION:Pf(W) 100 Rth(j-l) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 D=0.5 half sin wave D=0.2 D=0.1 D=0.05 D=0.8 D.C. TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 10 Rth(j-a) On glass-epoxy substrate soldering land 10mm□ 1 0.001 0 0.1 10 1000 0 0.2 TIME:t(s) Rth-t CHARACTERISTICS 0.4 0.6 0.8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 1 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RF05VA1S 　 Data Sheet 1.2 0A 0V D.C. 0.8 T 0.6 D=0.8 D=0.5 half sin wave D=0.2 D=0.1 0.2 D=0.05 0 0 30 60 90 120 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) t Io 1.2 0A 0V t Io VR D=t/T VR=150V Tj=150°C 1 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=150V Tj=150°C D.C. D=0.8 0.6 D=0.5 half sin wave D=0.2 D=0.1 0.2 D=0.05 0 0 30 60 90 120 T 0.8 0.4 0.4 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(kV) 20 15 10 AVE:13.3kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A