RF05VA2S_11

Data Sheet Super Fast Recovery Diode RF05VA2S Series Standard Fast Recovery Dimensions (Unit : mm) 0.17±0.1 　　 0.05 1.3±0.05 Land size figure (Unit : mm) 1.1 Applications High Frequency rectification 1.9±0.1 2.5±0.2 Features 1)Small mold type. （TUMD2） 2)high switching speed 3)Low forward voltage 0.8±0.05 TUMD2 Structure Construction Silicon epitaxial planer ROHM : TUMD2 　　　 0.1 dot (year week factory) + day 0.6±0.2 Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 3.5±0.05 1.75±0.1 φ1.55±0.1 　　　　　 0 0.25±0.05 8.0±0.2 1.43±0.05 4.0±0.1 φ1.0±0.2 　　　　　0 2.75 2.8±0.05 0.9±0.08 Absolute maximum ratings (TI=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Conditions Direct voltage Glass epoxy substrate mounted 60Hz half sin wave,resistive load 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Limits 200 200 0.5 6 150 55 to 150 Unit V V A A C C Electrical characteristics (Tj=25C) Parameter Symbol Forward voltage Reverse current Reverse recovery time VF IR trr Conditions IF=0.5A VR=200V IF=0.5A,IR=1A,Irr=0.25×I R Min. － － － Typ. 0.85 0.01 11 Max. 0.98 10 25 Unit V μA ns www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A 0.8 0.5 2.0 RF05VA2S 　 Data Sheet 10 10000 Tj=150°C Tj=150°C FORWARD CURRENT: IF(A) 1000 REVERSE CURRENT: IR(nA) Tj=125°C 1 Tj=125°C Tj=25°C 100 Tj=75°C 10 Tj=25°C 1 0.1 Tj=75°C 0.01 300 400 500 600 700 800 900 1000 1100 1200 1300 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 0 50 100 150 200 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 100 f=1MHz 900 890 FORWARD VOLTAGE : VF(mV) 880 870 860 850 840 AVE:848.8mV 830 820 810 IF=0.5A CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 800 VF DISPERSION MAP 100 VR=200V REVERSE CURRENT : IR(nA) 30 f=1MHz VR=0V CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 25 AVE:1.8nA AVE:24.3pF 1 IR DISPERSION MAP 20 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RF05VA2S 　 Data Sheet 30 1cyc REVERSE RECOVERY TIME:trr(ns) 30 IF=0.5A IR=1A Irr=0.25×IR PEAK SURGE FORWARD CURRENT : IFSM(A) 25 Ifsm 25 20 8.3ms 20 15 15 AVE:10.2ns 10 AVE:13.7A 10 5 5 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 100 IFSM PEAK SURGE FORWARD CURRENT : IFSM(A) PEAK SURGE FORWARD CURRENT : IFSM(A) 100 IFSM time 8.3ms 8.3ms 1cyc. 10 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 30 1000 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVE:28.2kV 20 TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 25 Rth(j-a) 100 Rth(j-c) 15 10 AVE:5.9kV 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ 1 0.001 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RF05VA2S 　 Data Sheet 0.45 D.C. 0.4 0.35 FORWARD POWER DISSIPATION:Pf(W) 0.3 0.25 0.2 0.15 0.1 0.05 0 0 0.2 0.4 0.6 0.8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS D=0.1 D=0.05 D=0.5 half sin wave D=0.2 D=0.8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.9 0.8 D.C. 0.7 D=0.8 0.6 0.5 half sin wave 0.4 0.3 0.2 0.1 0 0 30 60 90 D=0.2 D=0.1 D=0.05 D=0.5 0A 0V t T Io VR D=t/T VR=160V Tj=150°C 120 150 0A 0V t T Io VR D=t/T VR=160V Tj=150°C AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) 0.9 0.8 D.C. AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.7 D=0.8 0.6 0.5 half sin wave 0.4 0.3 0.2 0.1 0 0 30 60 90 120 150 CASE TEMPERATURE:Tl(°C) DERATING CURVE (Io-Tl) D=0.2 D=0.1 D=0.05 D=0.5 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A