RF071L4S

Super Fast Recovery Diode RF071L4S Series Standard Fast Recovery Dimensions(Unit : mm) Land size figure(Unit : mm) 2.0 2.0 Applications General rectification PMDS Features 1)Small power mold type.(PMDS) 2)high switching speed 3)Low forward voltage Structure Construction Silicon epitaxial planer Taping dimensions(Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75± 0.1 0.3 5.5± 5 0.0 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Tl=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature Electrical characteristics (Tj=25C) Parameter Forward voltage Reverse current Reverse recovery time Thermal resistance VRM VR Io IFSM Tj Tstg Conditions D0.5 Direct voltage Glass epoxy substrate mounted Tl=120C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25C 　 5.3± 0.1 0.05 9.5± 0.1 Limits 400 400 1 15 150 -55to+150 12± 2 0. 4.2 Unit V V A A C C Symbol VF IR trr Rth(j-l) Conditions IF=0.7A VR=400V IF=0.5A,IR=1A,Irr=0.25×IR junction to lead Min. Typ. 1 0.01 20 Max. 1.25 10 25 23 Unit V μA ns C/W www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.A RF071L4S 　 Data Sheet  Electrical characteristics curves 10 1000 CAPACITANCE BETWEEN TERMINALS : Ct(pF) 100 f=1MHz 1 REVERSE CURRENT : I R(nA) FORWARD CURRENT : I F(A) Tj=125 C Tj=150 C 100 Tj=125 C 10 Tj=75 C Tj=150 C 0.1 Tj=25 C Tj=75 C 10 0.01 1 Tj=25 C 0.001 0 500 1000 1500 2000 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 0.1 0 100 200 300 400 REVERSE VOLTAGE : V R(V) VR-IR CHARACTERISTICS 1 0 5 10 15 20 25 REVERSE VOLTAGE : V R(V) VR-Ct CHARACTERISTICS 30 1100 IF=0.7A Tj=25 C n=30pcs 10 CAPACITANCE BETWEEN TERMINALS : Ct(pF) Tj=25 C VR=400V n=30pcs 40 f=1MHz VR=0V Tj=25 C 30 AVE : 29.2pF FORWARD VOLTAGE : V F(mV) 1050 REVERSE CURRENT : I R(nA) 1000 1 AVE : 4.2nA 20 950 AVE : 980.8mV 900 VF DISPERSION MAP 0.1 IR DISPERSION MAP 10 Ct DISPERSION MAP 80 Ifsm 60 8.3ms 1cyc RESERVE RECOVERY TIME : trr(ns) 30 25 20 15 10 5 0 IFSM DISRESION MAP trr DISPERSION MAP AVE : 20.1ns IF=0.5A IR=1A Irr=0.25*IR Tj=25 C 1000 PEAK SURGE FORWARD CURRENT : I FSM(A) PEAK SURGE FORWARD CURRENT : I FSM(A) Ifsm 100 8.3ms 8.3ms 1cyc 40 AVE : 41.2A 20 10 0 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1000 100 100 30 IM=10mA IF=100mA ELECTROSTATIC DISCHARGE TEST ESD(KV) TRANSIENT THAERMAL IMPEDANCE : Rth (  C/W) 25 AVE : 14.1kV Rth(j-a) 100 1ms PEAK SURGE FORWARD CURRENT : I FSM(A) time 20 300s 10 Ifsm t 15 10 AVE : 3.40kV 5 10 Rth(j-l) 1 On Glass Epoxi Board 0.1 0.001 1 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 0 C=200pF R=0 C=100pF R=1.5k 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.02 - Rev.A RF071L4S 　 Data Sheet 0A 0V Io t 1.8 T 1.6 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) D.C. 1.4 1.2 1 half sin wave 0.8 0.6 0.4 0.2 D=0.05 D=0.1 D=0.2 D=0.8 D=0.5 VR D=t/T VR=320V Tj=150C 1.2 D.C. AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 1 half sin wave FORWARD POWER DISSIPATION : Pf(W) 0.8 D=0.2 D=0.1 D=0.05 D=0.5 D=0.8 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 D=0.05 half sin wave D=0.2 D.C. 0A 0V t T D=0.8 Io VR D=t/T VR=320V Tj=150C 0.6 D=0.5 0.4 0.2 D=0.1 0 0 0.3 0.6 0.9 1.2 1.5 1.8 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 0 0 30 60 90 120 150 AMBIENT TEMPERATURE : Ta( C)  Derating Curve"(Io-Ta) 0 0 30 60 90 120 150 LEAD TEMPARATURE : Tl(C) Derating Curve"(Io-Tl) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.02 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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