RF071M2S_11

Data Sheet Fast Recovery Diode RF071M2S  Applications General rectification  Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05  Land size figure (Unit : mm) 1.2 0.85  Features 1)Small power mold type.(PMDU) 2)Ultra low VF 3)Ultra high switching speed 4)Low switching loss  Construction Silicon epitaxial planer 2.6±0.1 3.5±0.2 PMDU 0.9±0.1  Structure 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date  Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 3.5±0.05 1.75±0.1 0.25±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX  Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) IF Forward current（DC） Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz 1cyc) ・ Junction temperature Tj Storage temperature Tstg (*1)Mounted on epoxy board. 180°Half sine wave Limits 200 200 1 0.7 15 150 55 to 150 Unit V V A A A °C °C  Electrical characteristics(Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR Min. - Typ. 0.79 0.01 12 Max. 0.85 10 25 Unit V μA ns IF=0.7A VR=200V Conditions trr IF=0.5A,IR=1A,Irr=0.25*IR www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.E 3.05 ① RF071M2S Data Sheet 1 Ta=150℃ 0.1 Ta=125℃ 10000 1000 Ta=150℃ Ta=125℃ 100 f=1MHz f=1MHz REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) Ta=75℃ 100 Ta=25℃ 10 1 0.1 0.01 Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 200 10 Ta=75℃ 0.01 Ta=25℃ Ta=-25℃ 0.001 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 50 100 150 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30 820 100 100 FORWARD VOLTAGE:VF(mV) 80 70 60 50 40 30 20 10 AVE:11.1nA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 810 REVERSE CURRENT:IR(nA) Ta=25℃ IF=0.7A n=30pcs 90 Ta=25℃ VR=200V n=30pcs 90 80 70 60 50 40 30 20 10 0 AVE:37.0pF Ta=25℃ f=1MHz VR=0V n=10pcs 800 790 AVE:795.7mV 780 770 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 200 30 1000 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 150 Ifsm 1cyc 8.3ms 25 20 15 10 5 0 AVE:12.2ns Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 100 100 10 50 AVE:63.0A 0 IFSM DISRESION MAP 1 trr DISPERSION MAP 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 100 1000 Ifsm t 100 1000 IM=10mA time IF=0.5A 1 Rth(j-a) 0.8 DC D=1/2 0.6 Sin(θ＝180) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 1ms 300us 10 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) 10 0.4 1 0.2 0.1 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.001 0.01 0.1 1 10 100 1000 0 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.E RF071M2S Data Sheet 3 3 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t T T AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V 2 DC 1 D=1/2 Sin(θ＝180) 0 0 25 50 75 Io Io VR D=t/T VR=100V Tj=150℃ 0A 0 0V 0 2 Io Io tt TT VR D=t/T VR=100V VR=100V Tj=150℃ Tj=150℃ No break at 30kV 25 20 15 10 5 0 DC 1 D=1/2 Sin(θ＝180) 0 AVE:13.6kV 100 125 150 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.E Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A