Data Sheet
Super Fast Recovery Diode
RF081M2S
Series Standard Fast Recovery Dimensions (Unit : mm)
1.6±0.1 0.1±0.1 0.05
Land size figure (Unit : mm)
1.2
0.85
2.6±0.1
3.5±0.2
PMDU
Features 1)Small power mold type. (PMDU) 2)high switching speed 3)Low Reverse current
0.9±0.1
Structure
Construction Silicon epitaxial planar
ROHM : PMDU JEDEC :SOD-123 Manufacture Date
0.8±0.1
Taping dimensions (Unit : mm)
4.0±0.1 2.0±0.05 φ1.55±0.05
1.75±0.1
0.25±0.05
3.5±0.05
8.0±0.2
1.81±0.1
4.0±0.1
φ1.0±0.1
3.71±0.1
1.5MAX
Absolute maximum ratings (Tl=25°C) Parameter Symbol VRM Repetitive peak Reverse voltage VR Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature Io IFSM Tj Tstg
Limits 200 200 0.8 1.0 15 150 55 to 150
Conditions Unit V V Direct voltage Glass epoxy substrate mounted A 50×50mm Glass epoxy substrate mounted A 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C °C °C
Electrical characteristics (Tj=25°C) Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal Resistance VF IR trr Rth(j-l)
Min. - - - - -
Typ. 0.83 0.86 0.01 12 -
Max. 0.95 0.98 10 25 20
Unit V μA ns IF=0.8A IF=1.0A VR=200V
Conditions
IF=0.5A,IR=1A,Irr=0.25*IR
°C/W junction to lead
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3.05
①
Applications General rectification
2011.05
RF081M2S
Electrical characteristics curves
Data Sheet
10 Tj=150℃
10000 Tj=150 ℃
100 f=1MHz
FORWARD CURRENT:IF(A)
1
100
Tj=125℃ Tj=25 ℃
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Tj=125 ℃
REVERSE CURRENT:IR(nA)
1000
10
0.1
Tj=25℃
10
0.01 200
400
600
800
1000
1200
1 0 50 100 150 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 200
1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
900
100
60 Tj=25℃ VR=200V n=20pcs Tj=25 ℃ f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
850
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Tj=25℃ IF=1.0A n=20pcs
55
800
10 AVE:10.8nA
50 AVE:51.5pF
AVE:818mV
750
45
700
1 VF DISPERSION MAP IR DISPERSION MAP
40 Ct DISPERSION MAP
100
30
1000
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE FORWARD CURRENT:IFSM(A)
80
25 20 15 10 5 0
PEAK SURGE FORWARD CURRENT:IFSM(A)
Tj=25 ℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs
Ifsm 100 8.3ms 8.3ms
60 AVE:69.5A 40
1cyc
AVE:12.2ns
10
20
0 IFSM DISPERSION MAP
1 trr DISPERSION MAP 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
1000
30 No break at 30kV
1000
IM=10mA
IF=0.5A Rth(j-a)
TRANSIENT THAERMAL IMPEDANCE:Rth ( ℃/W)
Ifsm
ELECTROSTATIC DISCHARGE TEST ESD(KV)
25 20 15 10 5 0 AVE:13.6kV
PEAK SURGE FORWARD CURRENT:IFSM(A)
t 100
100
1ms
time
300us Mounted on epoxy board 10 Rth(j-c)
10
1
1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
C=200pF R=0 Ω
C=100pF R=1.5kΩ
0.1 0.001
0.01
0.1
1
10
100
1000
ESD DISPERSION MAP
TIME:t(s) Rth-t CHARACTERISTICS
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2011.05
RF081M2S
Data Sheet
0A 0V t 1 D.C. 0.8 D=0.8 D=0.5 half sin wave 0.6 D=0.1 0.4 D=0.05 D=0.2 D.C. 1.5 D=0.8
D=0.5
Io VR D=t/T VR=160V Tj=150 ℃
2
0A 0V t
Io VR
2 T D.C.
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
T
D=t/T VR=16 0V Tj=150 ℃
1.5
D=0.8
D=0.5
FORWARD POWER DISSIPATION:Pf(W)
1
half sin wave D=0.2
1
half sin wave D=0.2
0.2
0.5
D=0.1 D=0.05
0.5
D=0.1 D=0.05
0 0 0.5 1 1.5 2
0 0 30 60 90 120 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta)
0 0 30 60 90 120 150 CASE TEMPARATURE:Tc(℃ ) Derating Curve(Io-Tc)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS
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3/3
2011.05
Notice
Notes
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http://www.rohm.com/contact/
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R1120A
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