RF081M2S_11

Data Sheet Super Fast Recovery Diode RF081M2S  Series Standard Fast Recovery  Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05  Land size figure (Unit : mm) 1.2 0.85 2.6±0.1 3.5±0.2 PMDU  Features 1)Small power mold type. (PMDU) 2)high switching speed 3)Low Reverse current 0.9±0.1  Structure  Construction Silicon epitaxial planar ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1  Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX  Absolute maximum ratings (Tl=25°C) Parameter Symbol VRM Repetitive peak Reverse voltage VR Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature Io IFSM Tj Tstg Limits 200 200 0.8 1.0 15 150 55 to 150 Conditions Unit V V Direct voltage Glass epoxy substrate mounted A 50×50mm Glass epoxy substrate mounted A 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C °C °C  Electrical characteristics (Tj=25°C) Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal Resistance VF IR trr Rth(j-l) Min. － － － － － Typ. 0.83 0.86 0.01 12 － Max. 0.95 0.98 10 25 20 Unit V μA ns IF=0.8A IF=1.0A VR=200V Conditions IF=0.5A,IR=1A,Irr=0.25*IR °C/W junction to lead www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 3.05 ①  Applications General rectification 2011.05 RF081M2S  Electrical characteristics curves Data Sheet 10 Tj=150℃ 10000 Tj=150 ℃ 100 f=1MHz FORWARD CURRENT:IF(A) 1 100 Tj=125℃ Tj=25 ℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Tj=125 ℃ REVERSE CURRENT:IR(nA) 1000 10 0.1 Tj=25℃ 10 0.01 200 400 600 800 1000 1200 1 0 50 100 150 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 200 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 900 100 60 Tj=25℃ VR=200V n=20pcs Tj=25 ℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) 850 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Tj=25℃ IF=1.0A n=20pcs 55 800 10 AVE:10.8nA 50 AVE:51.5pF AVE:818mV 750 45 700 1 VF DISPERSION MAP IR DISPERSION MAP 40 Ct DISPERSION MAP 100 30 1000 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 80 25 20 15 10 5 0 PEAK SURGE FORWARD CURRENT:IFSM(A) Tj=25 ℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 100 8.3ms 8.3ms 60 AVE:69.5A 40 1cyc AVE:12.2ns 10 20 0 IFSM DISPERSION MAP 1 trr DISPERSION MAP 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 30 No break at 30kV 1000 IM=10mA IF=0.5A Rth(j-a) TRANSIENT THAERMAL IMPEDANCE:Rth ( ℃/W) Ifsm ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 0 AVE:13.6kV PEAK SURGE FORWARD CURRENT:IFSM(A) t 100 100 1ms time 300us Mounted on epoxy board 10 Rth(j-c) 10 1 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 C=200pF R=0 Ω C=100pF R=1.5kΩ 0.1 0.001 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 RF081M2S Data Sheet 0A 0V t 1 D.C. 0.8 D=0.8 D=0.5 half sin wave 0.6 D=0.1 0.4 D=0.05 D=0.2 D.C. 1.5 D=0.8 D=0.5 Io VR D=t/T VR=160V Tj=150 ℃ 2 0A 0V t Io VR 2 T D.C. AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) T D=t/T VR=1６ 0V Tj=150 ℃ 1.5 D=0.8 D=0.5 FORWARD POWER DISSIPATION:Pf(W) 1 half sin wave D=0.2 1 half sin wave D=0.2 0.2 0.5 D=0.1 D=0.05 0.5 D=0.1 D=0.05 0 0 0.5 1 1.5 2 0 0 30 60 90 120 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 0 0 30 60 90 120 150 CASE TEMPARATURE:Tc(℃ ) Derating Curve(Io-Tc) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A