RF08L6S_11

Data Sheet Super Fast Recovery Diode RF08L6S Series Standard Fast Recovery Dimensions (Unit : mm) 2.6±0.2 Land size figure (Unit : mm) 2.0 2.0 1.2±0.3 ① ② 0.1±0.02 　　　 0.1 5.0±0.3 6 8 6 1 4.5±0.2 Applications General rectification PMDS Features 1)Small power mold type. （PMDS） 2)high switching speed 3)Low forward voltage 1.5±0.2 2.0±0.2 Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture date Construction Silicon epitaxial planar Taping dimensions (Unit : mm) 2.0±0.05 4.0±0.1 φ1.55±0.05 0.3 5.5±0.05 1.75±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX 4.2 5.3±0.1 　 0.05 9.5±0.1 Absolute maximum ratings (Tl=25°C) Parameter Symbol Repetitive peak Reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Conditions D≦0.5 Direct voltage Glass epoxy substrate mounted 60Hz half sin wave, Non-repetitive Ta=25°C one cycle peak value, Tj=25°C Tl=100°C Limits 600 600 0.8 20 150 55 to 150 12±0.2 Unit V V A A °C °C Electrical characteristic (Tj=25°C) Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal Resistance VF IR trr Rth(j-l) Conditions IF=0.8A VR=600V IF=0.5A,IR=1A,Irr=0.25×I R junction to lead Min. － － － － Typ. 1 0.01 50 － Max. 1.3 10 70 23 Unit V μA ns °C/W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.A RF08L6S 　 Data Sheet 10 10000 100 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 1 Tj=125℃ Tj=150℃ 1000 100 Tj=125℃ Tj=150℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz 0.1 Tj=25℃ Tj=75℃ 10 10 Tj=75℃ 0.01 1 Tj=25℃ 0.1 0.001 0 500 1000 1500 2000 1 0 100 200 300 400 500 600 0 5 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 1100 100 60 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR (nA) 1050 CAPACITANCE BETWEEN TERMINALS:Ct(pF) IF=0.8A Tj=25℃ n=30pcs 10 AVE:7.35nA 1 Tj=25℃ VR=600V n=30pcs f=1MHz VR=0V Tj=25℃ 50 1000 AVE:999.5mV 950 40 AVE:44.2pF 900 VF DISPERSION MAP 0.1 IR DISPERSION MAP 30 Ct DISPERSION MAP 80 60 REVERSE RECOVERY TIME:trr(ns) 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 60 55 50 45 40 35 30 AVE:48.8ns PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 8.3ms IF=0.5A IR=1A Irr=0.25*IR Tj=25℃ Ifsm 100 8.3ms 8.3ms 1cyc 40 AVE:49.4A 20 10 0 IFSM DISRESION MAP 1 trr DISPERSION MAP 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IM=10mA IF=100mA 100 30 1000 1000 25 20 15 10 AVE：2.70kV 5 0 AVE：9.80kV TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) ELECTROSTATIC DISCHARGE TEST ESD(KV) Rth(j-a) 100 1m time 300us PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 100 10 Rth(j-l) 1 On Glass Epoxi Board 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 C=200pF R=0Ω C=100pF R=1.5kΩ 0.1 0.001 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.A RF08L6S 　 Data Sheet 0A 0V 1.4 1.2 Io t T VR D=t/T VR=480V Tj=150℃ D.C. 1.8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) FORWARD POWER DISSIPATION:Pf(W) 1 0.8 0.6 0.4 0.2 0 0 D=0.5 half sin wave D=0.2 D=0.1 D=0.0 1.4 1.2 1 0.8 0.6 0.4 0.2 D=0.5 T D=t/T VR=480V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=0.8 1.6 D.C. D=0.8 0A 0V Io t VR 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 D.C. D=0.8 D=0.5 half sin wave D=0.2 half sin wave D=0. 0 30 60 D=0.0 90 120 150 D=0.2 D=0.1 D=0.05 150 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.5 2 0 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 30 60 90 120 LEAD TEMPARATURE:Tl(℃) Derating Curveﾞ(Io-Tl) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A