RF1001T2D_11

Data Sheet Fast recovery diodes RF1001T2D Applications General rectification Dimensions (Unit : mm) 4.5±0.3 0.1 Structure Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss 1.2 10.0±0.3 0.1 2.8±0.2 0.1 (1) (2) (3) 15.0±0.4 0.2 13.5MIN 8.0±0.2 12.0±0.2 Construction Silicon epitaxial planar 1.3 0.8 (1) (2) (3) 5.0±0.2 0.7±0.1 0.05 8.0 2.6±0.5 ROHM : TO220FN Manufacture Date Limits Symbol Reverse voltage (repetitive peak) 200 VRM Reverse voltage (DC) 200 VR Average rectified forward current (*1) 10 Io Forward current surge peak (60Hz/1cyc) 80 IFSM Junction temperature 150 Tj Storage temoerature 55 to 150 Tstg (*1)Business frequencies, Rating of R-load, Tc=126 C. 1/2 Io per diode Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Thermal impedance Absolute maximum ratings (Ta=25C) Parameter Unit V V A A C C Symbol VF IR trr  j-c Min. - Typ. 0.87 0.01 15 - Max. 0.93 10 30 2.5 Unit V μA ns C/W Conditions IF=5A VR=200V IF=0.5A, IR=1A, Irr=0.25*I R JUNCTION TO CASE www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.D RF1001T2D Electrical characteristics curves 10000 Ta=150 C 1 Ta=125C 0.1 Ta=75C Ta=-25C Ta=25C 1000 　 Data Sheet 10 Ta=150 C Ta=125 C 1000 f=1MHz REVERSE CURRENT:IR(nA) FORWARD CURRENT:I F(A) Ta=75C 100 Ta=25C 10 Ta=-25 C 1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 200 100 0.01 10 0.001 0 100 200 300 400 500 600 700 800 900 100 110 120 000 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0.1 0 50 100 150 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 1 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30 890 Ta=25C IF=5A n=30pcs 100 90 Ta=25 C VR=200V n=30pcs 200 195 Ta=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 880 80 70 60 50 40 30 20 AVE:10.7nA 190 185 180 175 170 165 160 155 150 AVE:174.9pF 870 860 850 AVE:857.4mV 840 VF DISPERSION MAP 10 0 IR DISPERSION MAP Ct DISPERSION MAP 300 30 1000 Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:I FSM(A) PEAK SURGE FORWARD CURRENT:I FSM(A) 250 200 150 100 50 AVE:167.0A 0 IFSM DISPERSION MAP 25 20 15 10 5 AVE:14.5ns 0 trr DISPERSION MAP 100 8.3ms 8.3ms 1cyc 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 20 100 1000 100 Mounted on epoxy board IM=100mA TRANSIENT THAERMAL IMPEDANCE:Rth (C/W) Ifsm 1cyc 8.3ms IF=5A Rth(j-a) 15 DC D=1/2 10 Sin(θ=180) PEAK SURGE FORWARD CURRENT:I FSM(A) 1ms 300us 100 1 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W)  j-c 10 time 5 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 1 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 100 1000 0 0 5 10 15 20 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.D RF1001T2D 　 Data Sheet 30 25 0A 0V t 20 DC 15 10 5 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) Sin(=180) D=1/2 T Io 30 25 0A 0V t 20 15 10 Sin(=180) 5 0 0 25 50 75 100 125 150 DC T Io 30 No break at 30kV 25 No break at 30kV AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=t/T VR=100V Tj=150 C D=t/T VR=100V Tj=150 C ELECTROSTATIC DISCHARGE TEST ESD(KV) VR VR 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k D=1/2 CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A