RF1005TF6S_11

Data Sheet Super Fast Recovery Diode RF1005TF6S Series Standard Fast Recovery Dimensions (Unit : mm) +0.3 10 −0.1 +0.3 4.5 −0.1 Structure 2.8 −0.1 +0.2 3.2 ±0.2 Applications General rectification 15 +0.4 −0.2 12 ±0.2 (1) 8 ±0.2 (3) Features 1)Single type.(TO-220) 2)High switching speed 2.3 ±0.3 1.02 1.12 0.76 Construction Silicon epitaxial planer 14 ±0.5 (1) 2.54 ±0.5 (3) 2.54 ±0.5 0.62 −0.05 +0.1 1.6MAX 2.6 ±0.5 ROHM : TO220NFM Manufacture Year Manufacture Week Absolute maximum ratings (Tc=25C) Parameter Symbol VRM Repetitive peak reverse voltage Reverse voltage VR Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature Electrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage IR Reverse current Reverse recovery time(*) trr Thermal resistance(*) Rth(j-c) (*) : Design assurance without measurement. Conditions Duty  0.5 Direct voltage 60Hz half sin wave, Resistance load, IFSM Tj Tstg Tc=78C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25C Limits 600 600 10 100 150 55 to 150 Unit V V A A C C Conditions IF=10A VR=600V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. - Typ. 1.4 0.05 30 - Max. 1.7 10 40 3.5 Unit V μA ns C/ W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.A RF1005TF6S Electrical characteristics curves 　 Data Sheet 100 100000 Tj=150C Tj=125 C 1000 Tj=125 C FORWARD CURRENT : I F(A) REVERSE CURRENT : IR(nA) 10000 Tj=75C f=1MHz Tj=25 C 10 Tj=150 C 1000 Tj=25 C 1 CAPACITANCE BETWEEN TERMINALS : Ct(pF) 350 100 100 Tj=75 C Tj=25C 10 0.1 0 500 1000 1500 2000 2500 3000 1 0 50 100 150 200 250 300 10 0 5 10 15 20 25 30 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 1400 100 300 FORWARD VOLTAGE : V F(mV) REVERSE CURRENT : IR(nA) 1300 CAPACITANCE BETWEEN TERMINALS : Ct(pF) Tｊ=25 C IF=10A n=20pcs Tｊ=25 C VR=600V n=20pcs 280 Ta=25℃ f=1MHz VR=0V n=10pcs AVE : 270.6pF AVE : 40.6nA 10 260 240 1200 AVE : 1268mV 220 1100 1 200 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 250 40 1000 REVERSE RECOVERY TIME : trr(ns) 35 30 25 20 15 10 5 0 AVE : 29.0ns ITS ABILITY OF PEAK SURGE FORWARD CURRENT : I FSM(A) 200 150 AVE : 192A 100 IFSM 50 8.3ms 0 1cyc PEAK SURGE FORWARD CURRENT : I FSM(A) Tｊ=25C IF=0.5A IR=1A Irr=0.25×IR n=10pcs 100 10 IFSM 8.3ms 8.3ms 1cyc. 1 1 10 100 IFSM DISRESION MAP 1000 30 trr DISPERSION MAP NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 no break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) IFSM 20 15 10 5 0 AVE ： 20.7kV time TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) 25 Rth(j-c) PEAK SURGE FORWARD CURRENT : I FSM(A) 100 1 10 1 10 100 C=200pF R=0 C=100pF R=1.5k 0.1 0.001 0.01 0.1 1 10 100 1000 TIME : t(ms) IFSM-t CHARACTERISTICS ESD DISPERSION MAP TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.A RF1005TF6S 　 Data Sheet 35 D.C. 30 25 20 15 10 5 0 0 3 6 9 12 15 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 18 D=0.1 D=0.0 D=0.8 D=0.5 half sin wave D=0.2 16 14 D.C. D=0.8 0A 0V t T Io VR D=t/T VR=480V Tj=150 C AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 12 10 D=0.5 FORWARD POWER DISSIPATION : Pf(W) half sin wave 8 6 4 2 0 0 30 60 90 120 CASE TEMPARATURE : Tc( C) Derating Curveﾞ(Io-Tc) 150 D=0.05 D=0.2 D=0.1 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A