RF101A2S

RF101A2S Diodes Fast recovery diode RF101A2S Applications General rectification External dimensions (Unit : mm) CATH O D E　 B AN D (GREEN) φ0.6 ±0 .1 Features 1) Cylindrical mold type. (MSR) 2) Ultra Low VF. 3) Ultra high switching. 4) Low switching loss. 5) High ESD. 29±1 3.0±0 .2 ① ② 7 29 ± 1 φ2 .5 ±0.2 ROHM : MS R ① ② Man u fac tu re Date Taping specifications (Unit : mm) Construction Silicon epitaxial planar IVORY H2 BLUE A E H2 記号 Mar k St abdard dimen 寸法規格値(sion mm) value (mm) B C T-31 52.4±1.5 Ａ T-32 26.0+0.4 -0 Ｂ 5.0±0.5 Ｃ 0.5ＭＡＸ Ｄ 0 Ｅ 50.4±0.4 Ｆ 0.3ＭＡＸ H1 6.0±0.5 H2 5.0±0.5 L1-L2 0.6ＭＡＸ ＊H1(6mm)：BROWN L1 H1 F L2 H1 D c f : c umulativ e pitc h toleranc ±1.5mm以下とする 注)　累積ピッチの許容差は20ピッチでe w ith 20 pitc h than ±1.5mm Absolute maximum ratings (Ta=25°C) Param eter Sym bol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak （t=100µs） Junction tem perature Tj Storage tem perature Tstg Lim its 200 200 1 20 150 -55 to +150 Unit V V A A ℃ ℃ (*1) Mounted on epoxy board. 180°Half sine wave Electrical characteristic (Ta=25°C) Parameter Symbol VF Forward voltage IR Reverse current Reverse recovery time trr Min. - Typ. 0.815 0.01 12 Max. 0.87 10 25 Unit V µA ns Conditions IF=1.0A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR 1/3 RF101A2S Diodes Electrical characteristic curves 1 Ta=150℃ 0.1 Ta=125℃ 10000 1000 Ta=150℃ Ta=125℃ 100 f=1MHz Hz f=1M REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 100 Ta=25℃ 10 1 0.1 0.01 Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 200 Ta=75℃ 10 Ta=75℃ 0.01 Ta=25℃ Ta=-25℃ 0.001 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 50 100 150 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30 850 100 Ta=25℃ IF=1A n=30pcs 90 Ta=25℃ VR=200V n=30pcs 100 90 Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) 70 60 50 40 30 20 10 AVE:11.1nA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 840 80 80 70 60 50 40 30 20 10 0 AVE:51.4pF 830 820 810 AVE:818.6mV 800 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 200 30 1000 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 150 Ifsm 1cyc 8.3ms 25 20 15 10 5 0 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 100 100 AVE:12.2ns 10 50 AVE:63.0A 0 IFSM DISRESION MAP 1 trr DISPERSION MAP 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 10 0 1000 1000 IF=0.5A Rth(j-a) IM=1mA time(s) td=300us Rth(j-l) 2 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1.5 DC D=1/2 FORWARD POWER DISSIPATION:Pf(W) 100 100 1 Sin(θ＝180) Rth(j-c) 10 0.5 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1 0.001 0 0.01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 0.5 1 1.5 2 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2/3 RF101A2S Diodes 3 0A 0V 2 t t V VR D=t/ D=t/T VR=100V T T Tj=150℃ Io 3 ELECTROSTATIC DISCHARGE TEST ESD(KV) 0A0 0 0V Io t t VR D=t/T T VR=100V T Tj=150℃ 30 No break at 30kV 25 20 AVE:22.6kV 15 10 5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) DC D=1/2 2 DC D=1/2 1 Sin(θ＝180) 0 0 25 50 75 100 125 1 50 1 Sin(θ＝180) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 0 C=200pF R=0Ω C=100pF R=1.5kΩ AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1