Data Sheet
Fast Recovery Diode
RF101L2S
Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 Features 1)Small power mold type. (PMDS) 2)Ultra low VF 3)Ultra high switching speed 4)Low switching loss
6 ① 6 ②
2.0
2.6±0.2
4.5±0.2
1.2±0.3
0.1±0.02 0.1
5.0±0.3
Construction Silicon epitaxial
1.5±0.2
2.0±0.2
PMDS
Structure
ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture date
Taping dimensions (Unit : mm)
4.0±0.1 2.0±0.05 φ1.55±0.05
1.75±0.1
5.5±0.05
φ1.55 2.9±0.1 4.0±0.1 2.8MAX
Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1)
Forward current surge peak (60Hz 1cyc) ・
Limits 200 200 1 20 150 55 to 150
Unit V V A A °C °C
VRM VR Io IFSM Tj Tstg
Junction temperature Storage temperature
(*1)Mounted on epoxy board. 180°Half sine wave
Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current Reverse recovery time VF IR trr
Min. -
Typ. 0.815 0.01 12
Max. 0.87 10 25
Unit V μA ns IF=1.0A
VR=200V IF=0.5A,IR=1A,Irr=0.25*IR
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1/3
5.3±0.1 0.05 9.5±0.1
Conditions
12±0.2
2011.05 - Rev.B
4.2
0.3
RF101L2S
Data Sheet
1 Ta=150℃ 0.1 Ta=125℃ Ta=75℃ 0.01 Ta=25℃ Ta=-25℃
10000 1000
Ta=150℃
Ta=125℃
100
f=1MHz f=1MHz
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
Ta=75℃ 100 Ta=25℃ 10 1 0.1 0.01 Ta=-25℃
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
200
10
0.001 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
1
0
50 100 150 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
0
5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
25
30
850
100
100
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
840
Ta=25℃ IF=1A n=30pcs
90 80 70 60 50 40 30 20 10 AVE:11.1nA
Ta=25℃ VR=200V n=30pcs
90 80 70 60 50 40 30 20 10 0 AVE:37.0pF
Ta=25℃ f=1MHz VR=0V n=10pcs
830
820
810
AVE:818.6mV
800
0 VF DISPERSION MAP IR DISPERSION MAP
Ct DISPERSION MAP
200
30
REVERSE RECOVERY TIME:trr(ns)
1000
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
150
Ifsm 8.3ms
1cyc
25 20 15 10 5 0 AVE:12.2ns
Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs
Ifsm 8.3ms 8.3ms 1cyc
100
100
50 AVE:63.0A 0 IFSM DISRESION MAP
10
1 trr DISPERSION MAP
Mounted on epoxy board
1
10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
100
1000 Ifsm t 100
1000
IM=10mA
IF=100mA
2 Rth(j-a) 1.5 DC D=1/2 1 Sin(θ=180)
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE FORWARD CURRENT:IFSM(A)
1m
time
100
300u
10
Rth(j-c)
10
FORWARD POWER DISSIPATION:Pf(W)
1
0.5
1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001
0 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.5 1 1.5 2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS
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2/3
2011.05 - Rev.B
RF101L2S
Data Sheet
3 0A 0V 2 DC D=1/2 1 Sin(θ=180) 0 0 25 50 75 100 125 150 t t T T Io V VR D=t/ D=t/T VR=100V Tj=150℃
3
AVERAGE RECTIFIEd FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
t
2
DC D=1/2
VR D=t/T T VR=100V T Tj=150℃
ELECTROSTATIC DISCHARGE TEST ESD(KV)
0A0 0V 0
Io t
30
No break at 30kV
25 20 15 10 5
1
Sin(θ=180)
AVE:13.6kV
0 0 25 50 75 100 125 150
CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc)
0 C=200pF R=0Ω C=100pF R=1.5kΩ
AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta)
ESD DISPERSION MAP
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3/3
2011.05 - Rev.B
Notice
Notes
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http://www.rohm.com/contact/
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