RF101L2S_11

Data Sheet Fast Recovery Diode RF101L2S  Applications General rectification  Dimensions (Unit : mm)  Land size figure (Unit : mm) 2.0  Features 1)Small power mold type. (PMDS) 2)Ultra low VF 3)Ultra high switching speed 4)Low switching loss 6 ① 6 ② 2.0 2.6±0.2 4.5±0.2 1.2±0.3 0.1±0.02 　　　 0.1 5.0±0.3  Construction Silicon epitaxial 1.5±0.2 2.0±0.2 PMDS  Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture date  Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 5.5±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX  Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz 1cyc) ・ Limits 200 200 1 20 150 55 to 150 Unit V V A A °C °C VRM VR Io IFSM Tj Tstg Junction temperature Storage temperature (*1)Mounted on epoxy board. 180°Half sine wave  Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current Reverse recovery time VF IR trr Min. - Typ. 0.815 0.01 12 Max. 0.87 10 25 Unit V μA ns IF=1.0A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 5.3±0.1 　 0.05 9.5±0.1 Conditions 12±0.2 2011.05 - Rev.B 4.2 0.3 RF101L2S Data Sheet 1 Ta=150℃ 0.1 Ta=125℃ Ta=75℃ 0.01 Ta=25℃ Ta=-25℃ 10000 1000 Ta=150℃ Ta=125℃ 100 f=1MHz f=1MHz REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) Ta=75℃ 100 Ta=25℃ 10 1 0.1 0.01 Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 200 10 0.001 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 50 100 150 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30 850 100 100 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 840 Ta=25℃ IF=1A n=30pcs 90 80 70 60 50 40 30 20 10 AVE:11.1nA Ta=25℃ VR=200V n=30pcs 90 80 70 60 50 40 30 20 10 0 AVE:37.0pF Ta=25℃ f=1MHz VR=0V n=10pcs 830 820 810 AVE:818.6mV 800 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 200 30 REVERSE RECOVERY TIME:trr(ns) 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 150 Ifsm 8.3ms 1cyc 25 20 15 10 5 0 AVE:12.2ns Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 100 100 50 AVE:63.0A 0 IFSM DISRESION MAP 10 1 trr DISPERSION MAP Mounted on epoxy board 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 Ifsm t 100 1000 IM=10mA IF=100mA 2 Rth(j-a) 1.5 DC D=1/2 1 Sin(θ＝180) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 1m time 100 300u 10 Rth(j-c) 10 FORWARD POWER DISSIPATION:Pf(W) 1 0.5 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.5 1 1.5 2 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.B RF101L2S Data Sheet 3 0A 0V 2 DC D=1/2 1 Sin(θ＝180) 0 0 25 50 75 100 125 150 t t T T Io V VR D=t/ D=t/T VR=100V Tj=150℃ 3 AVERAGE RECTIFIEd FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t 2 DC D=1/2 VR D=t/T T VR=100V T Tj=150℃ ELECTROSTATIC DISCHARGE TEST ESD(KV) 0A0 0V 0 Io t 30 No break at 30kV 25 20 15 10 5 1 Sin(θ＝180) AVE:13.6kV 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 0 C=200pF R=0Ω C=100pF R=1.5kΩ AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A