RF1501NS3S_11

Data Sheet Super Fast Recovery Diode RF1501NS3S Series Ultra Fast Recovery Dimensions (Unit : mm) Land size figure (Unit : mm) Applications General rectification RF1501 NS3S ① Features 1)Ultra low switching loss 2)High current overload capacity Structure ② Construction Silicon epitaxial planer ROHM : LPDS JEITA : TO263S Manufacture Year, Week and Day ① ① ③ Taping dimensions (Unit : mm) Absolute maximum ratings (Tc=25°C) Parameter Symbol VRM Repetitive peak reverse voltage VR Reverse voltage Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty≤0.5 Direct voltage 60Hz half sin wave resistive load at Tc=54°C Limits 350 300 20 100 150 - 55 to +150 Unit V V A A °C °C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Electrical characteristics (Tj=25°C) Parameter Symbol VF Forward voltage Reverse current Reverse recovery time Thermal resistance IR trr Rth(j-c) Conditions IF=20A VR=300V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. － － － － Typ. 1.35 0.06 22 － Max. 1.5 10 30 2.5 Unit V μA ns °C/W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.09 - Rev.A RF1501NS3S 　 Data Sheet 100 Tj=150°C FORWARD CURRENT:IF(A) Tj=125°C 1 Tj=25°C REVERSE CURRENT:IR(nA) 10 1000000 100000 Tj=150°C Tj=125°C 10000 Tj=75°C 0.1 1000 Tj=75°C 100 Tj=25°C 0.01 10 0.001 0 500 1000 1500 2000 2500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 50 100 150 200 250 300 350 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz FORWARD VOLTAGE:VF(mV) 1400 IF=20A Tj=25°C 1300 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 1200 AVE:1234mV 1100 10 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1000 VF DISPERSION MAP 1000 VR=300V Tj=25°C REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 400 390 380 370 360 350 340 AVE:356pF 330 320 310 f=1MHz VR=0V Tj=25°C 100 AVE:18.2nA 10 1 IR DISPERSION MAP 300 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.09 - Rev.A RF1501NS3S 　 Data Sheet 400 30 Tj=25°C IF=0.5A IR=1A Irr=0.25×IR n=10pcs 350 ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) IFSM 8.3ms 25 300 1cyc. 20 250 AVE:269A 200 15 AVE:16.6ns 10 150 5 100 IFSM DISPERSION MAP 0 trr DISPERSION MAP 1000 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) 100 PEAK SURGE FORWARD CURRENT:IFSM(A) 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 100 10 1 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 No break at 30kV TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 10 Rth(j-c) 20 15 1 10 5 C=100pF R=1.5kΩ 0 C=200pF R=0Ω 0.1 0.001 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.09 - Rev.A RF1501NS3S 　 Data Sheet 60 D.C. 50 FORWARD POWER DISSIPATION:Pf(W) D=0.5 40 half sin wave D=0.2 D=0.1 20 D=0.05 D=0.8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 20 18 16 14 D=0.2 12 10 8 6 4 2 D=0.1 D=0.05 D.C. D=0.8 D=0.5 half sin wave 0A 0V t T Io VR 30 D=t/T VR=350V Tj=150°C On glass-epoxy substrate soldering land 2mm□ 10 0 0 10 20 30 40 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0 0 30 60 90 120 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) 35 D.C. 0A 30 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=0.8 0V 25 D=0.5 T 20 half sin wave 15 D=0.2 10 D=0.1 5 D=0.05 t VR D=t/T VR=350V Tj=150°C Io 0 0 30 60 90 120 150 CASE TEMPERATURE:Tl(°C) DERATING CURVE (Io-Tl) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A