RF1601T2D_10

Fast recovery diodes RF1601T2D Applications General rectification Dimensions (Unit : mm) 4.5±0.3 　　　 0.1 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 Structure 1.2 1.3 0.8 5.0±0.2 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss (1) (2) (3) 8.0±0.2 12.0±0.2 15.0±0.4 　 0.2 13.5MIN 8.0 ① Construction Silicon epitaxial planar (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date Absoslute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz/1cyc) Junction temperature Storage temoerature Limits 200 VRM 200 VR 16 Io 80 IFSM 150 Tj -55 to +150 Tstg (*1)Business frequency, Rating of R-load, Tc=120C. 1/2 Io per diode Unit V V A A C C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. - Typ. - Max. 0.93 10 30 Unit V μA ns Conditions IF=8A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.D RF1601T2D Electrical characteristics curves 　 Data Sheet 10 Ta=150 C 10000 Ta=150 C Ta=125 C 1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 Ta=125 C 0.1 Ta=75 C Ta=-25 C 0.01 Ta=25 C REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 1000 Ta=75 C 100 Ta=25 C 10 Ta=-25 C 1 100 10 0.001 0 100 200 300 400 500 600 700 800 900 100 0 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0.1 0 50 100 150 REVERSE VOLTAGE:V R(V) VR-IR CHARACTERISTICS 200 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:V R(V) VR-Ct CHARACTERISTICS 890 Ta=25 C IF=8A n=30pcs 100 90 REVERSE CURRENT:IR(nA) 80 70 60 50 40 30 20 10 AVE:11.6nA Ta=25 C VR=200V n=30pcs 320 315 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 310 305 300 295 290 285 280 275 270 AVE:293.4pF Ta=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) 880 870 860 AVE:862.3mV 850 840 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 AVE:210.0A 0 Ifsm 1cyc 8.3ms 30 25 20 15 10 5 AVE:18.3ns 0 trr DISPERSION MAP IFSM DISPERSION MAP Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 100 8.3ms 1cyc 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 Ifsm t 100 TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) 30 Mounted on epoxy board IM=100mA PEAK SURGE FORWARD CURRENT:IFSM(A) IF=8A FORWARD POWER DISSIPATION:Pf(W) 25 D=1/2 DC 10 1ms tim Rth(j-a) 20 Sin(=180) 15 300us 100 1 Rth(j-c) 10 5 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0 0.1 0.001 0 0.01 0.1 1 10 100 1000 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS 5 10 15 20 25 30 35 40 www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.02 - Rev.D RF1601T2D 　 Data Sheet 40 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 Sin(=180) D=1/2 DC 0A 0V t T Io VR D=t/T VR=100V Tj=150 C 40 35 30 25 20 15 10 5 0 0 25 50 Sin(=180) D=1/2 DC 0A 0V t T Io VR ELECTROSTATIC DISCHARGE TEST ESD(KV) D=t/T VR=100V Tj=150 C 30 No break at 30kV 25 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k No break at 30kV 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) ESD DISPERSION MAP www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.02 - Rev.D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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