RF1601T2D_11

Data Sheet Fast recovery diodes RF1601T2D Applications General rectification Dimensions (Unit : mm) 4.5±0.3 　　　 0.1 Structure 1.2 1.3 5.0±0.2 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 (1) (2) (3) 8.0±0.2 12.0±0.2 15.0±0.4 　 0.2 8.0 13.5MIN (1) (2) (3) 0.7±0.1 0.05 ① Construction Silicon epitaxial planar 0.8 2.6±0.5 ROHM : TO220FN ① Manufacture Date Absoslute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz/1cyc) Junction temperature Storage temoerature Limits 200 VRM 200 VR 16 Io 80 IFSM 150 Tj 55 to 150 Tstg (*1)Business frequency, Rating of R-load, Tc=120C. 1/2 Io per diode Unit V V A A C C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. - Typ. - Max. 0.93 10 30 Unit V μA ns Conditions IF=8A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.D RF1601T2D Electrical characteristics curves 　 Data Sheet 10 Ta=150 C 10000 Ta=150C Ta=125 C 1000 f=1MHz Ta=125 C 0.1 Ta=75 C Ta=25 C Ta=75 C 100 Ta=25 C 10 Ta=-25 C 1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 REVERSE CURRENT:IR(nA) FORWARD CURRENT:I F(A) 1000 100 Ta=-25 C 0.01 10 0.001 0 100 200 300 400 500 600 700 800 900 100 0 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0.1 0 50 100 150 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 200 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 890 Ta=25C IF=8A n=30pcs 100 90 Ta=25 C VR=200V n=30pcs 320 315 Ta=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 880 80 70 60 50 40 30 20 10 AVE:11.6nA 310 305 300 295 290 285 280 275 270 AVE:293.4pF 870 860 AVE:862.3mV 850 840 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 300 30 1000 Ta=25C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm PEAK SURGE FORWARD CURRENT:I FSM(A) PEAK SURGE FORWARD CURRENT:I FSM(A) 250 200 150 100 50 Ifsm 1cyc 8.3ms REVERSE RECOVERY TIME:trr(ns) 25 20 15 10 5 AVE:18.3ns 0 8.3ms 100 8.3ms 1cyc 10 AVE:210.0A 0 1 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISPERSION MAP 1000 Ifsm t 100 30 Mounted on epoxy board IM=100mA TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) PEAK SURGE FORWARD CURRENT:I FSM(A) IF=8A 25 D=1/2 DC 20 Sin(=180) 15 10 5 0 10 1ms time Rth(j-a) 100 300us 1 Rth(j-c) 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 FORWARD POWER DISSIPATION:Pf(W) 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 35 40 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.D RF1601T2D 　 Data Sheet 40 40 0A 0V DC T D=1/2 t Io VR 30 No break at 30kV 25 No break at 30kV AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 30 25 20 15 10 5 0 0 D=1/2 DC t T 30 25 20 15 10 5 0 D=t/T VR=100V Tj=150 C ELECTROSTATIC DISCHARGE TEST ESD(KV) 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 35 0A Io VR 35 D=t/T VR=100V Tj=150 C 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k Sin(=180) Sin(=180) 25 50 75 100 125 150 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A