RF2001T2D

Data Sheet Fast recovery diode RF2001T2D Applications General rectification Dimensions (Unit : mm) 4.5±0.3 　　　 0.1  Structure ① 1.2 1.3 0.8 (1) (2) (3) 13.5MIN Construction Silicon epitaxial planar 5.0±0.2 8.0±0.2 12.0±0.2 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 (1) (2) (3) 15.0±0.4 　 0.2 8.0 0.7±0.1 0.05 2.6±0.5 ROHM : TO220FN ① Manufacture Date Limits Symbol Reverse voltage (repetitive peak) 200 VRM Reverse voltage (DC) 200 VR Average rectified forward current (*1) 20 Io Forward current surge peak (60Hz/1cyc) 100 IFSM Junction temperature 150 Tj Storage temoerature 55 to 150 Tstg (*1)Business frequencies, Rating of R-load, Tc=113C. 1/2 Io per diode Absoslute maximum ratings (Ta=25C) Parameter Unit V V A A C C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. - Typ. 0.87 0.01 20 Max. 0.93 10 30 Unit V μA ns Conditions IF=10A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.D RF2001T2D Electrical characteristics curves 　 Data Sheet 10 Ta=150 C 1 10000 Ta=150 C Ta=125 C 1000 f=1MHz REVERSE CURRENT:IR(nA) FORWARD CURRENT:I F(A) Ta=25 C 0.1 Ta=75 C Ta=-25 C 0.01 Ta=75 C 100 Ta=25 C 10 Ta=-25 C 1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125 C 1000 100 10 0.001 0 100 200 300 400 500 600 700 800 900 100 0 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0.1 0 50 100 150 200 250 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 300 1 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30 890 Ta=25 C IF=10A n=30pcs 100 90 Ta=25 C VR=300V n=30pcs 400 390 Ta=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 880 REVERSE CURRENT:IR(nA) 80 70 60 50 40 30 20 10 0 AVE:10.1nA 380 370 360 350 340 330 320 AVE:352.9pF 870 860 850 AVE:867.0mV 840 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 250 200 150 100 50 0 IFSM DISPERSION MAP Ifsm 1cyc 8.3ms 30 1000 Ta=25C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:I FSM(A) PEAK SURGE FORWARD CURRENT:I FSM(A) 25 20 15 10 5 AVE:20.2ns 0 8.3ms 100 8.3ms 1cyc 10 AVE:237.0A 1 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 40 35 30 DC D=1/2 Sin(=180) 100 1000 Ifsm 100 Mounted on epoxy board IM=100mA PEAK SURGE FORWARD CURRENT:I FSM(A) t TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) IF=10A FORWARD POWER DISSIPATION:Pf(W) 10 1ms time Rth(j-a) 300us 25 20 15 10 5 100 1 Rth(j-c) 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 35 40 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.D RF2001T2D 　 Data Sheet 40 35 0A DC 30 25 20 15 10 5 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) Sin(=180) D=1/2 0V t T Io 40 35 DC VR D=t/T VR=100V Tj=150 C 30 No break at 30kV 25 Sin(=180) No break at 30kV AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 30 D=1/2 25 20 15 10 5 0 0 25 T 50 0A 0V t Io VR D=t/T VR=100V Tj=150 C ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 75 100 125 150 CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A