RF2001T2D_10

Fast recovery diode RF2001T2D Applications General rectification Dimensions (Unit : mm) 4.5±0.3 　　　 0.1 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1  Structure 1.2 1.3 0.8 5.0±0.2 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss (1) (2) (3) 8.0±0.2 12.0±0.2 15.0±0.4 　 0.2 13.5MIN 8.0 ① Construction Silicon epitaxial planar (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date Limits Symbol Reverse voltage (repetitive peak) 200 VRM Reverse voltage (DC) 200 VR Average rectified forward current (*1) 20 Io Forward current surge peak (60Hz/1cyc) 100 IFSM Junction temperature 150 Tj Storage temoerature -55 to +150 Tstg (*1)Business frequencies, Rating of R-load, Tc=113C. 1/2 Io per diode Absoslute maximum ratings (Ta=25C) Parameter Unit V V A A C C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. - Typ. 0.87 0.01 20 Max. 0.93 10 30 Unit V μA ns Conditions IF=10A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.D RF2001T2D Electrical characteristics curves 　 Data Sheet 10 Ta=150 C 10000 Ta=150 C 1000 Ta=125 C f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25 C 0.1 Ta=75 C Ta=-25 C 0.01 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 1 Ta=125 C 1000 Ta=75 C 100 Ta=25 C 10 Ta=-25 C 1 100 10 0.001 0 100 200 300 400 500 600 700 800 900 100 0 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0.1 0 50 100 150 200 250 REVERSE VOLTAGE:V R(V) VR-IR CHARACTERISTICS 300 1 0 5 10 15 20 REVERSE VOLTAGE:V R(V) VR-Ct CHARACTERISTICS 25 30 890 Ta=25 C IF=10A n=30pcs 100 90 REVERSE CURRENT:IR(nA) 80 70 60 50 40 30 AVE:10.1nA 20 10 Ta=25 C VR=300V n=30pcs 400 390 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 380 370 360 350 340 330 AVE:352.9pF Ta=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) 880 870 860 850 AVE:867.0mV 840 VF DISPERSION MAP 0 IR DISPERSION MAP 320 Ct DISPERSION MAP 300 250 200 Ifsm 1cyc 8.3ms RESERVE RECOVERY TIME:trr(ns) 30 25 20 15 10 5 AVE:20.2ns 0 Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 100 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 150 100 50 0 10 AVE:237.0A 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 40 35 30 DC D=1/2 Sin(=180) 100 IFSM DISPERSION MAP trr DISPERSION MAP 1000 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) t TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) 100 Mounted on epoxy board IM=100mA IF=10A 10 FORWARD POWER DISSIPATION:Pf(W) 1ms tim Rth(j-a) 300us 25 20 15 10 5 100 1 Rth(j-c) 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 35 40 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.02 - Rev.D RF2001T2D 　 Data Sheet 40 35 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) DC 30 25 20 15 10 5 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) Sin(=180) D=1/2 T 0A 0V t Io 40 35 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=100V Tj=150 C 30 DC 25 D=1/2 Sin(=180) ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 75 100 125 150 C=200pF R=0 C=100pF R=1.5k No break at 30kV No break at 30kV 30 25 20 15 10 5 0 0 25 T 50 0A 0V t Io VR D=t/T VR=100V Tj=150 C CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) ESD DISPERSION MAP www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.02 - Rev.D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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