RF2001T3D_10

Fast recovery diodes RF2001T3D Applications General rectification Dimensions (Unit : mm) Structure 4.5±0.3 　　　 0.1 ① 1.3 0.8 (1) (2) (3) 13.5MIN Construction Silicon epitaxial planar 1.2 5.0±0.2 8.0±0.2 12.0±0.2 15.0±0.4 　 0.2 8.0 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date Absoslute maximum ratings (Ta=25C) Parameter Limits Symbol Reverse voltage (repetitive peak) 300 VRM Reverse voltage (DC) 300 VR Average rectified forward current (*1) 20 Io Forward current surge peak (60Hz/1cyc) 100 IFSM Junction temperature 150 Tj Storage temoerature -55 to +150 Tstg (*1)Business frequency, Rating of R-load, Tc=113C　 1/2 Io per diode Unit V V A A C C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. - Typ. - Max. 1.3 10 25 Unit V μA ns Conditions IF=10A VR=300V IF=0.5A,IR=1A,Irr=0.25*I R www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.D RF2001T3D Electrical characteristics curves Ta=150C Data Sheet 10 Ta=150C 100000 Ta=125C 1000 f=1MHz 10000 1 FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125C Ta=75C Ta=25C 100 1000 Ta=75C 0.1 Ta=-25C 100 Ta=25C 0.01 10 Ta=-25C 1 10 0.001 0 10 20 30 40 50 60 70 80 90 10 11 12 0 0 0 0 0 0 0 0 0 00 00 00 FORWARD VOLTAGE:VF(mV) VF-I F CHARACTERISTICS 0.1 0 50 100 150 200 250 300 REVERSE VOLTAGE:VR(V) VR-I R CHARACTERISTICS 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1.17 Ta=25C IF=10A n=30pcs 1.15 300 Ta=25C VR=300V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 400 390 380 370 360 350 340 330 320 310 300 AVE:356.9pF Ta=25C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) 1.14 REVERSE CURRENT:IR(nA) 1.16 250 200 150 100 AVE:29.7nA 1.13 AVE:1.135V 50 1.12 VF DISPERSION MAP 0 IR DISPERSION MAP 1000 Ta=25C IF=0.5A IR=1A Irr=0.25*I R n=10pcs Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms Ct DISPERSION MAP 200 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 1cyc RESERVE RECOVERY TIME:trr(ns) 30 25 150 20 100 1cyc 100 15 10 10 50 AVE:157.0A 0 IFSM DISPERSION MAP 5 AVE:20.3ns 1 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1000 100 TRANSIENT THAERMAL IMPEDANCE:Rth (C/W) Mounted on epoxy board IM=100mA 40 D=1/2 30 DC IF=5A PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 10 Rth(j-a) 300us FORWARD POWER DISSIPATION:Pf(W) 1ms time Sin(=180) 100 20 1 Rth(j-c) 10 10 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 0.1 0.001 0 0.01 1 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 100 1000 0 10 20 30 40 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.02 - Rev.D RF2001T3D Data Sheet 50 45 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 40 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C)  Derating Curve"(Io-Ta) Sin(=180) D=1/2 DC 0A 0V t T Io VR D=t/T VR=150V Tj=150 C  50 45 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 40 35 30 25 20 15 10 5 0 0 25 50 Sin(=180) DC 0A 0V t T D=1/2 Io ELECTROSTATIC DISCHARGE TEST ESD(KV) VR D=t/T VR=150V Tj=150 C  30 No break at 30kV 25 20 15 10 AVE:11.6kV 5 0 75 100 125 150 C=200pF R=0 C=100pF R=1.5k CASE TEMPARATURE:Tc( C)  Derating Curve"(Io-Tc) ESD DISPERSION MAP www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.02 - Rev.D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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