RF2001T3D_11

Data Sheet Fast recovery diodes RF2001T3D Applications General rectification Dimensions (Unit : mm) Structure 4.5±0.3 　　　 0.1 ① 1.3 0.8 (1) (2) (3) 13.5MIN Construction Silicon epitaxial planar 1.2 5.0±0.2 8.0±0.2 12.0±0.2 15.0±0.4 　 0.2 8.0 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date Absoslute maximum ratings (Ta=25C) Parameter Limits Symbol Reverse voltage (repetitive peak) 300 VRM Reverse voltage (DC) 300 VR Average rectified forward current (*1) 20 Io Forward current surge peak (60Hz/1cyc) 100 IFSM Junction temperature 150 Tj Storage temoerature 55 to 150 Tstg (*1)Business frequency, Rating of R-load, Tc=113C　 1/2 Io per diode Unit V V A A C C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. - Typ. - Max. 1.3 10 25 Unit V μA ns Conditions IF=10A VR=300V IF=0.5A,IR=1A,Irr=0.25*I R www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.D RF2001T3D Electrical characteristics curves Ta=150 C Data Sheet 10 Ta=150 C 100000 10000 REVERSE CURRENT:IR(nA) Ta=125 C 1000 f=1MHz FORWARD CURRENT:I F(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 Ta=125 C Ta=75 C Ta=25 C 1000 100 10 Ta=75 C Ta=25 C 100 0.1 Ta=-25 C 0.01 10 Ta=-25 C 1 0.1 0 50 100 150 200 250 300 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 0.001 0 10 20 30 40 50 60 70 80 90 10 11 12 0 0 0 0 0 0 0 0 0 00 00 00 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1.17 300 Ta=25 C IF=10A n=30pcs 250 200 150 100 AVE:29.7nA 50 0 V F DISPERSION MAP IR DISPERSION MAP 30 REVERSE RECOVERY TIME:trr(ns) 400 Ta=25 C VR=300V n=30pcs 390 CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD VOLTAGE:VF(mV) 1.16 REVERSE CURRENT:IR(nA) 380 370 360 350 340 330 320 310 300 Ct DISPERSION MAP 1000 AVE:356.9pF Ta=25 C f=1MHz VR=0V n=10pcs 1.15 1.14 1.13 AVE:1.135V 1.12 200 Ifsm PEAK SURGE FORWARD CURRENT:I FSM(A) 1cyc 8.3ms 25 20 15 10 5 0 trr DISPERSION MAP 150 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 100 1cyc 100 10 50 AVE:157.0A 0 IFSM DISPERSION MAP AVE:20.3ns 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 Ifsm t 100 TRANSIENT THAERMAL IMPEDANCE:Rth (°C/W) Mounted on epoxy board IM=100mA 40 D=1/2 30 DC IF=5A Sin(=180) 20 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 Rth(j-a) 300us 100 1 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) 1ms time 10 10 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 0.1 0.001 0.01 1 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 100 1000 0 0 10 20 30 40 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.D RF2001T3D Data Sheet 50 45 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 50 0A 0V t D=1/2 DC T Io VR D=t/T VR=150V Tj=150C 0A 0V t DC T D=1/2 Io ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 15 10 AVE:11.6kV 5 0 45 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=150V Tj=150C 40 35 30 25 20 15 10 5 0 0 25 50 Sin(=180) 40 35 30 25 20 15 10 5 0 0 25 50 75 Sin(=180) 75 100 125 150 100 125 150 C=200pF R=0 C=100pF R=1.5k AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A