RF2001T4S_10

Fast recovery diode RF2001T4S Applications General rectification  Dimensions (Unit : mm) Structure 4.5±0.3 　　　 0.1 1.2 1.3 0.8 (1) (2) (3) 5.0±0.2 Construction Silicon epitaxial planar ① 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 　 0.2 8.0 Features 1) High reliability.(TO-220) 2) Low noise. 3) Very fast switching . 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date Symbol VRM VR Io IFSM Tj Tstg (*1)Business frequency, Rating of R-load, Tc=94CMAX. Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz/1cyc)(*1) Junction temperature Storage temperature Absolute maximum ratings (Ta=25C) Parameter Limits 430 400 20 100 150 -55 to +150 Unit V V A A C C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. - Typ. - Max. 1.6 10 30 Unit V μA ns Conditions IF=20A VR=400V IF=0.5A,IR=1A Irr=0.25*I R www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.03 - Rev.B RF2001T4S Electrical characteristics curves 　 Data Sheet 100 Ta=125 C FORWARD CURRENT:I F(A) 10 Ta=25 C Ta=150 C 1 Ta=-25 C Ta=75 C 1000000 Ta=150 C 100000 REVERSE CURRENT:IR(nA) Ta=125 C 1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10000 Ta=75 C 1000 Ta=25 C 100 Ta=-25 C 100 0.1 10 0.01 0 200 400 600 800 1000 1200 1400 1600 1800 FORWARD VOLTAGE:V F(mV) VF-IF CHARACTERISTICS 1 0 50 100 150 200 250 300 350 400 450 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 10 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1600 Ta=25 C IF=20A n=20pcs 1500 500 450 REVERSE CURRENT:IR(uA) 400 350 300 250 200 150 100 50 0 VF DISPERSION MAP AVE:55.8nA Ta=25 C VR=400V n=20pcs 500 Ta=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) 480 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 460 440 AVE:442.1pF 420 1400 AVE:1399mV 1300 400 IR DISPERSION MAP Ct DISPERSION MAP 300 RESERVE RECOVERY TIME:trr(ns) Ifsm 1cyc 8.3ms AVE:236.0A 30 25 20 AVE:22.6ns 15 10 5 0 trr DISPERSION MAP Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 Ifsm PEAK SURGE FORWARD CURRENT:I FSM(A) 8.3ms 8.3ms 100 1cyc PEAK SURGE FORWARD CURRENT:I FSM(A) 250 200 150 100 10 50 0 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISPERSION MAP 1000 100 Ifsm IM=100mA 50 IF=1A Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 45 40 1ms D=1/2 DC Sin(=180) PEAK SURGE FORWARD CURRENT:I FSM(A) t TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) time 300us 10 35 30 25 20 15 10 5 0 100 1 Rth(j-c) 10 0.1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 1 100 0.1 0.001 0.01 1 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 100 1000 0 10 20 30 40 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.03 - Rev.B RF2001T4S 　 Data Sheet 50 45 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 40 35 30 D=1/2 25 20 15 10 5 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) Sin(=180) DC T 0A 0V t Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=200V Tj=150 C 50 45 40 35 30 25 20 15 10 5 0 0 25 50 Sin(=180) D=1/2 DC 0A 0V t T Io VR D=t/T VR=200V Tj=150 C 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 No break at 30kV 20 15 AVE:8.8kV 10 5 0 75 100 125 150 C=200pF R=0 C=100pF R=1.5k C=150pF R=330 CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) ESD DISPERSION MAP www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.03 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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