RF2001T4S_11

Data Sheet Fast recovery diode RF2001T4S Applications General rectification  Dimensions (Unit : mm) Structure 4.5±0.3 　　　 0.1 1.2 1.3 0.8 (1) (2) (3) 5.0±0.2 Construction Silicon epitaxial planar ① 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 　 0.2 8.0 Features 1) High reliability. (TO-220) 2) Low noise. 3) Very fast switching . 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : TO220FN ① Manufacture Date Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz/1cyc)(*1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg (*1)Business frequency, Rating of R-load, Tc=94CMAX. Absolute maximum ratings (Ta=25C) Parameter Limits 430 400 20 100 150 55 to 150 Unit V V A A C C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. - Typ. - Max. 1.6 10 30 Unit V μA ns Conditions IF=20A VR=400V IF=0.5A,IR=1A Irr=0.25*I R www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.B RF2001T4S Electrical characteristics curves 　 Data Sheet 100 Ta=125 C Ta=75 C 1000000 Ta=150 C 100000 Ta=125 C 1000 f=1MHz REVERSE CURRENT:IR(nA) FORWARD CURRENT:I F(A) Ta=25 C 1 Ta=150 C Ta=-25 C 10000 Ta=75 C 1000 100 10 1 Ta=25 C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 100 0.1 Ta=-25 C 0.01 0 200 400 600 800 1000 1200 1400 1600 1800 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0 50 100 150 200 250 300 350 400 450 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 10 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1600 Ta=25 C IF=20A n=20pcs 1500 500 450 Ta=25 C VR=400V n=20pcs 500 Ta=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) REVERSE CURRENT:IR(uA) 350 300 250 200 150 100 50 0 AVE:55.8nA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 400 480 460 440 AVE:442.1pF 420 1400 AVE:1399mV 1300 VF DISPERSION MAP 400 IR DISPERSION MAP Ct DISPERSION MAP 300 250 200 150 100 50 0 IFSM DISPERSION MAP AVE:236.0A Ifsm 1cyc 8.3ms 30 1000 Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:I FSM(A) PEAK SURGE FORWARD CURRENT:I FSM(A) 25 20 AVE:22.6ns 15 10 5 0 trr DISPERSION MAP 100 8.3ms 8.3ms 1cyc 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 100 Ifsm IM=100mA 50 IF=1A time 300us Rth(j-a) 45 40 1ms D=1/2 DC Sin(=180) PEAK SURGE FORWARD CURRENT:I FSM(A) t TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) FORWARD POWER DISSIPATION:Pf(W) 10 35 30 25 20 15 10 5 0 100 1 Rth(j-c) 10 0.1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 1 100 0.1 0.001 0.01 1 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 100 1000 0 10 20 30 40 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.B RF2001T4S 　 30 No break at 30kV Data Sheet 50 45 0A 0V t T D=1/2 DC Io 50 45 0A 0V t DC T Io VR D=t/T VR=200V Tj=150 C No break at 30kV AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 35 30 25 20 15 10 5 0 0 25 50 75 Sin(=180) D=t/T VR=200V Tj=150 C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 40 VR 40 35 30 25 20 15 10 5 0 Sin(=180) D=1/2 ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 0 AVE:8.8kV 100 125 150 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) C=200pF R=0 C=100pF R=1.5k C=150pF R=330 CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A