RF201L2S_11

Data Sheet Fast Recovery Diode RF201L2S  Applications General rectification  Dimensions (Unit : mm)  Land size figure (Unit : mm) 2.0  Features 1)Small power mold type. (PMDS) 2)Ultra low VF 3)Ultra high switching speed 4)Low switching loss 6 6 7 2.0 2.6±0.2 4.5±0.2 1.2±0.3 ① ② 0.1±0.02 　　　 0.1 5.0±0.3 PMDS  Construction Silicon epitaxial 1.5±0.2 2.0±0.2  Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture date  Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3 5.5±0.05 1.75±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX  Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz 1cyc) ・ Junction temperature Tj Storage temperature Tstg (*1)Mounted on epoxy board. 180°Half sine wave Limits 200 200 2 20 150 55 to 150 Unit V V A A °C °C  Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current Reverse recovery time IR trr Min. - Typ. 0.815 0.01 14 Max. 0.87 10 25 Unit V μA ns IF=2.0A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 5.3±0.1 　 0.05 9.5±0.1 Conditions 12±0.2 4.2 2011.05 RF201L2S Data Sheet 10 75℃ 10000 1000 150℃ 1000 f=1MHz REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 1 150℃ 0.1 125℃ 25℃ 0.01 75℃ 100 25℃ 10 -25℃ 1 0.1 125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 -25℃ 0.001 0.2 0.3 0.4 0.5 0.6 0.7 0.8 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS 0.9 1 0 50 100 150 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 200 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 850 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 840 REVERSE CURRENT:IR(nA) Ta=25℃ IF=2A n=30pcs 100 90 80 70 60 50 40 30 20 10 0 AVE:16.6ns 150 Ta=25℃ VR=200V n=30pcs 140 130 120 110 100 90 80 70 60 50 AVE:102.3pF f=1MHz VR=0V 830 AVE:815.3mV 820 810 800 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 250 30 1000 REVERSE RECOVERY TIME:trr(ns) Ifsm 1cyc 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 200 25 20 15 10 5 0 AVE:14.3ns PEAK SURGE FORWARD CURRENT:IFSM(A) 150 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 100 AVE:108.0A 100 10 50 0 IFSM DISRESION MAP 1 trr DISPERSION MAP Mounted on epoxy board 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 200 Ifsm 1000 IM=10m A 1m time IF=100mA 3 Rth(j-a) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 150 t 2.5 FORWARD POWER DISSIPATION:Pf(W) 100 300u D=1/2 Sin(θ＝180) DC 2 1.5 1 0.5 100 10 Rth(j-c) 50 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 0.1 1 10 100 1000 0 TIME:t(s) Rth-t CHARACTERISTICS 0 1 2 3 4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 RF201L2S Data Sheet 5 0A 0V DC D=1/2 2 Sin(θ＝180) Io t T 5 DC ELECTROSTATIC DISCHARGE TEST ESD(KV) 0A 0V Io t T VR D=t/T VR=100V Tj=150℃ 30 25 20 15 AVE:21.0kV 10 5 0 No break at 30kV AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4 3 VR D=t/T VR=100V Tj=150℃ 4 3 D=1/2 2 Sin(θ＝180) 1 1 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 C=200pF R=0Ω C=100pF R=1.5kΩ AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A