RF201L2S_1110

Fast Recovery Diode RF201L2S Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 Features 1)Small power mold type. (PMDS) 2)Ultra low VF 3)Ultra high switching speed 4)Low switching loss 2.0 2.6±0.2 ① ② 0.1±0.02 　　　 0.1 5.0±0.3 6 6 7 4.5±0.2 1.2±0.3 PMDS Construction Silicon epitaxial planer 1.5±0.2 2.0±0.2 Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture date Taping dimensions(Unit : mm) 4. 0±0. 1 2. 0±0. 05 φ1. 55±0. 05 0. 3 5. 5±0. 05 1. 75±0. 1 5. +0.1 3-0.0 φ1. 55 2. 9±0. 1 4. 0±0. 1 2. A X 8M Absolute maximum ratings(Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1)Mounted on epoxy board. 180°Half sine wave Limits 200 200 2 20 150 55 to 150 Unit V V A A °C °C Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current IR Reverse recovery time trr Min. - Typ. 0.815 0.01 14 Max. 0.87 10 25 Unit V μA ns 9. 5±0. 1 Conditions IF=2.0A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 1/3 12±0. 2 4.2 2011.09 Rev.B RF201L2S Data Sheet 10 75℃ FORWARD CURRENT:IF(A) 1 150℃ 0.1 125℃ 25℃ 0.01 10000 1000 150℃ 1000 f=1MHz REVERSE CURRENT:IR(nA) 75℃ 100 25℃ 10 -25℃ 1 0.1 125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 -25℃ 0.001 0.2 0.3 0.4 0.5 0.6 0.7 0.8 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS 0.9 1 0 50 100 150 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 200 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 850 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) Ta=25℃ IF=2A n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 840 100 90 80 70 60 50 40 30 20 10 0 150 Ta=25℃ VR=200V n=30pcs 140 130 120 110 100 90 80 70 60 50 AVE:102.3pF f=1MHz VR=0V 830 AVE:815.3mV 820 AVE:16.6ns 810 800 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 250 REVERSE RECOVERY TIME:trr(ns) Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 200 8.3ms AVE:108.0A 1cyc 30 25 20 15 10 5 0 IFSM DISRESION MAP trr DISPERSION MAP Mounted on epoxy board 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) 150 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 100 100 AVE:14.3ns 10 50 0 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 200 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 150 t 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) IM=10m A 1m time IF=100mA 3 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 2.5 2 1.5 1 0.5 100 300u D=1/2 Sin(θ＝180) DC 100 10 Rth(j-c) 50 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 0.1 1 10 100 1000 0 TIME:t(s) Rth-t CHARACTERISTICS 0 1 2 3 4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.09 Rev.B RF201L2S Data Sheet 5 0A 0V DC D=1/2 2 Sin(θ＝180) Io t T AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=100V Tj=150℃ 5 DC ELECTROSTATIC DISCHARGE TEST ESD(KV) 0A 0V Io t T VR D=t/T VR=100V Tj=150℃ 30 25 20 15 AVE:21.0kV 10 5 0 No break at 30kV AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4 4 3 3 D=1/2 2 Sin(θ＝180) 1 1 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 C=200pF R=0Ω C=100pF R=1.5kΩ AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.09 Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. 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