RF2L6S

Super Fast Recovery Diode RF2L6S Series Standard Fast Recovery Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 2.6±0.2 1.2±0.3 4.5±0.2 6 8 ① 6 2 ② 0.1±0.02 　　　 0.1 5.0±0.3 Features 1)Small power mold type. (MDS) 2)High switching speed 3)Low forward voltage PMDS 1.5±0.2 2.0±0.2 Structure ROHM : PMDS JEDEC : SOD-106   Manufacture date Construction Silicon epitaxial planar Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75± 0.1 0.3 5.5± 5 0.0 4.2 5.3± 0.1 φ1.55 　 9.5± 0.1 0.05 12± 2 0. Applications General rectification 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Tl=25 C) Parameter Symbol Repetitive peak Reverse voltage Reverse voltage Average rectified forward current(*1) Forward current surge peak (60Hz,1cyc,Tj=25 C) Junction temperature Storage temperature VRM VR Io IFSM Limits 600 600 1.5 40 Unit V V A A 150 Tj C -55to+150 Tstg C (*1) Half sinwave on the Glass epoxy substrate (size : 50mm×50mm),Tc=90  CMax. Electrical characteristics (Tj=25 C) Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal Resistance VF IR trr Rth (j-l) Conditions IF=1.5A VR=600V Min. - Typ. 1.25 0.03 20 - 2.0 Max. 1.55 10 35 23 Unit V μA ns  C/W IF=0.5A,IR=1A,Irr=0.25×I R junction to lead www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/2 2010.05 - Rev.B RF2L6S Electrical characteristics curves 10 10000 　 1000 Tj=150℃ f =1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) Data Sheet FORWARD CURRENT:IF (A) 1 REVERSE CURRENT:IR(nA) Tj=125℃ 1000 Tj=125℃ Tj=75℃ 100 Tj=25℃ 10 100 Tj=150℃ 0.1 Tj=25℃ 10 0.01 Tj=75℃ 0.001 0 400 800 1200 FORWARD VOLTAGE： VF (mV) VF -I F C HARACTERISTICS 1600 1 0 200 400 REVERSE VOLTAGE： VR(V) VR-I R C HARACTERISTICS 600 1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 1300 Tj=25℃ I F =1.5A n=20pcs 1000 REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ Tj=25℃ VR=200V VR=600V n=30pcs n=20pcs 100 f=1MHz V R =0V FORWARD VOLTAGE:VF (mV) 90 1250 100 80 AVE:87.3pF 70 1200 AVE:1209mV 1150 10 AVE:29.5ns 60 1100 VF D ISPERSION MAP 1 I R D ISPERSION MAP 50 Ct DISPERSION MAP 250 PEAK SURGE FORWARD CURRENT:IFSM(A) 30 RESERVE RECOVERY TIME:trr(ns) 25 20 AVE:20.1ns Tj=25℃ IF=0.5A IR =1A Irr=0.25*IR n=10pcs 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) 200 If sm 8.3ms 1cy c Ifsm 8.3ms 8.3ms 100 150 1cyc 15 10 5 0 100 10 50 AVE:84.5A 0 I FSM D ISPERSION MAP 1 1 trr DISPERSION MAP 10 NUMBER OF CY CLES I FSM-CY CLE CHARACTERISTICS 1000 Mounted on a epoxy board. IM=10mA IF=100mA 100 1000 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) t ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 18 TRANSIENT ℃ THAERMAL IMPEDANCE:Rth ( /W) 16 14 12 10 8 6 4 2 AVE:3.46kV AVE:5.14kV 100 1ms time 300us Rth(j-a) 100 10 Rth(j-l) 1 10 1 10 TIME:t(ms) I FSM-t CHARACTERISTICS 100 0 C=200pF R=0Ω C=100pF R=1.5kΩ 0.1 0.001 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME:t(s) Rth-t CHARACTERISTICS 0A 0V 2 1.8 1.6 Io t VR T D=t/T VR=480V Tj=150℃ D=0.8 D=0.5 half sin wav e D=0.2 D=0.1 D=0.05 D.C. 3 2.5 2 1.5 1 0.5 D=0.1 0 D=0.05 60 90 120 150 D.C. D=0.8 D=0.5 half sin wav e D=0.2 0A 0V t T Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=480V Tj=150℃ 3 D.C. 2.5 D=0.8 2 1.5 half sin wav e 1 0.5 D=0.1 0 0 30 60 90 D=0.2 D=0.5 FORWARD POWER DISSIPATION:Pf(W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 0.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=0.05 120 150 1 1.5 2 2.5 0 30 AVERAGE RECTIFIED FORWARD CURRENT： Io(A) Io-Pf CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃ ) Derating Curv eﾞ (Io-Ta) LEAD TEMPARATURE:Tl(℃ ) Derating Curv eﾞ (Io-Tl) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/2 2010.05 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. 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