RF301B2S_11

Data Sheet Fast Recovery Diode RF301B2S Applications General rectification Dimentions(Unit : mm)  Land size figure(Unit : mm) 6.0           Features 1)Power mold type(CPD) 2)Ultra Low VF 3)Very fast recovery 4)Low switching loss Construction Silicon epitaxial planar 1.6      1.6 CPD 2.3 2.3 Structure (2) ROHM : CPD JEITA : SC-63 Manufacture Date Taping specifications(Unit : mm) (1) (3) Symbol VRM VR Io IFSM Tj Tstg (*1)Bussiness frequencies, Rating of R-load, Tc=128C MAX. Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz / 1cyc)(*1) Junction temperature Storage temperature Absolute maximum ratings (Ta=25C) Parameter Limits 200 200 3 40 150 55 to 150 Unit V V A A °C °C Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Thermal impedance Symbol VF IR trr jc Min. - Typ. 0.87 10nA 14 - Max. 0.93 10 25 6 Unit V μA ns C/W Conditions IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R JUNCTION TO CASE www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.D 3.0 2.0 6.0 RF301B2S Electrical characteristics curves Data Sheet 10 10000 Ta=150 C Ta=150 C Ta=125 C 100 f=1MHz 1000 REVERSE CURRENT:IR(nA) FORWARD CURRENT:I F(A) Ta=125 C 100 Ta=75 C 0.1 Ta=75 C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 200 1 Ta=25 C 10 Ta=25 C 10 Ta=-25 C 0.01 1 Ta=-25 C 0.1 0.001 0 100 200 300 400 500 600 700 800 900 1000 0 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 50 100 150 1 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 890 Ta=25 C IF=3A n=30pcs 100 90 Ta=25 C VR=200V n=30pcs 150 140 130 Ta=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) REVERSE CURRENT:IR(nA) 880 80 70 60 50 40 30 20 10 AVE:4.60nA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 120 110 100 90 80 70 60 50 AVE:99.4pF 870 860 AVE:859.4mV 850 840 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 300 30 1000 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:I FSM(A) PEAK SURGE FORWARD CURRENT:I FSM(A) 250 200 150 100 Ifsm 1cyc 8.3ms 25 20 15 10 5 0 Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 100 AVE:126.0A 50 0 AVE:13.7ns 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 trr DISPERSION MAP IFSM DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.D RF301B2S Data Sheet 1000 Ifsm 100 Mounted on epoxy board 5 Rth(j-a) TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) PEAK SURGE FORWARD CURRENT: IFSM(A) t 4 D=1/2 10 Rth(j-c) IM=100mA IF=1.5A FORWARD POWER DISSIPATION:Pf(W) 3 Sin(=180) DC 100 2 1 1ms tim 1 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 300us 0.1 10 1000 0.1 0.001 0 0 1 2 3 4 5 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 10 9 0A 0V t Io 10 9 0A 0V t DC D=1/2 T Io 30 No break at 30kV 25 No break at 30kV AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 7 6 5 4 3 2 1 0 0 25 50 75 100 Sin(=180) D=1/2 DC D=t/T VR=100V T Tj=150 C 7 6 5 4 3 2 1 0 Sin(=180) D=t/T VR=100V Tj=150 C ELECTROSTATIC DISCHARGE TEST ESD(KV) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 8 VR 8 VR 20 15 10 5 0 125 150 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta( C) Derating Curve"(Io-Ta) CASE TEMPARATURE : Tc( C) Derating Curve"(Io-Tc) C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A