RF501B2STL

RF501B2S Data Sheet Fast Recovery Diode RF501B2S Dimensions（Unit : mm ） Land size figure(Unit : mm) 6.0 Features 1) Power mold type.(CPD) 2) High reliability 3) Low VF 1.6 CPD 4) Very fast recovery 5) Low switching loss 1.6 3.0 2.0 6.0 Applications General rectification 2.3 2.3 Structure Construction Silicon epitaxial planar (2) (1) (3) Taping specifications(Unit : mm) Absolute maximum ratings (Ta=25C) Parameter Limits Symbol 200 VRM 200 VR 5 Io Forward current surge peak (60Hz / 1cyc)(*1) 40 IFSM Junction temperature 150 Tj Storage temperature 55 to 150 Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=128C Unit V V A A °C °C Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Electrical characteristics(Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Symbol VF Min. Typ. Max. Unit - 0.86 0.92 V IR - 0.015 1 μA trr - 15 30 ns 1/3 Conditions IF=5A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R 2011.05 - Rev.G Data Sheet 　 RF501B2S Electrical characteristic curves Ta=25C Ta=75C Ta=-25C 0.01 1000 Ta=75C 100 Ta=25C 10 Ta=-25C 1 0.1 0.001 0 0 100 200 300 400 500 600 700 800 900 1000 890 150 880 870 860 AVE:856.6mV Ta=25C VR=200V n=30pcs 90 80 70 60 50 40 AVE : 10.7nA 30 20 10 840 0 VF DISPERSION MAP 8.3ms 200 1 0 10 20 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 150 AVE : 88.0A 100 200 Ta=25C f=1MHz VR=0V n=10pcs 190 180 170 AVE : 74.9pF 160 150 1000 50 Ta=25C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 AVE : 14.5ns 5 Ifsm 8.3ms 8.3ms 1cyc 100 10 1 0 0 1 IFSM DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 30 Ct DISPERSION MAP 30 1cyc REVERSE RECOVERY TIME : trr(ns) PEAK SURGE FORWARD CURRENT : I FSM(A) 250 10 IR DISPERSION MAP 300 Ifsm 100 200 100 Ta=25C IF=5A n=30pcs\ REVERSE CURRENT : IR(nA) FORWARD VOLTAGE : V F(mV) 100 f=1MHz REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 850 50 1000 PEAK SURGE FORWARD CURRENT : I FSM(A) 0.1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125C Ta=125C CAPACITANCE BETWEEN TERMINALS : Ct(pF) 1 REVERSE CURRENT : IR(nA) Ta=150C FORWARD CURRENT : :I F(A) Ta=150C 10000 10 trr DISPERSION MAP 2/3 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 2011.05 - Rev.G Data Sheet 　 RF501B2S 100 1000 10 Ifsm t 100 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 Io AVERAGE RECTIFIED FORWARD CURRENT : lo(A) 1 1ms 8 T IF=1A D=t/T VR=100V Tj=150C 6 4 Sin(180) 2 0 25 50 75 100 Sin(180) 4 2 tim 0 0.01 0.1 1 10 100 1000 0 10 0A Io 0V VR t DC T 8 125 150 AMBIENT TEMPERATURE : Ta(C) Derating Curveﾞ(Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4 6 8 10 30 D=t/T VR=100V Tj=150C D=1/2 6 4 Sin(180) 2 2 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 0 0 D=1/2 6 300us VR t D=1/2 IM=100mA No break at 30kV No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 0V DC AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 10 Rth(j-c) TIME : t(s) Rth-t CHARACTERISTICS 0A DC 8 10 0.1 0.001 10 1 Rth(j-a) FORWARD POWER DISSIPATION : Pf(W) TRANSIENT THAERMAL IMPEDANCE : Rth (C/W) PEAK SURGE FORWARD CURRENT : I FSM(A) Mounted on epoxy board 20 15 10 5 0 0 25 50 75 100 CASE TEMPARATURE : Tc(C) Derating Curveﾞ(Io-Tc) 3/3 125 150 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP 2011.05 - Rev.G Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A